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BSP315P

Description
1.17 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size490KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSP315P Overview

1.17 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET

BSP315P Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOT-223
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)24 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)1.17 A
Maximum drain current (ID)1.17 A
Maximum drain-source on-resistance0.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.8 W
Maximum pulsed drain current (IDM)4.68 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BSP315P
SIPMOS
®
Small-Signal-Transistor
Features
P-Channel
Enhancement mode
Product Summary
Drain source voltage
V
DS
-60
0.8
-1.17
V
A
Avalanche rated
Logic Level
dv/dt rated
Drain-Source on-state resistance
R
DS(on)
Continuous drain current
I
D
4
Pin 1
Pin2/4
PIN 3
Qualified according to AEC Q101
Halogen­free according to IEC61249­2­21
G
D
S
2
1
3
VPS05163
Type
BSP315P
Package
PG-SOT223
Tape and Reel Information
H6327:
1000 pcs/reel
Marking
BSP315P
Value
-1.17
-0.94
Packaging
Non dry
Unit
A
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I
D
T
A
= 25 °C
T
A
= 70 °C
Pulsed drain current
I
D puls
-4.68
24
0.18
6
kV/µs
T
A
= 25 °C
Avalanche energy, single pulse
E
AS
mJ
I
D
= -1.17 A ,
V
DD
= -25 V,
R
GS
= 25
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
E
AR
dv/dt
I
S
= -1.17 A,
V
DS
= -48 V, di/dt = 200 A/µs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation
V
GS
±20
1.8
-55...+150
55/150/56
Class 0
V
W
°C
P
tot
T
A
= 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
ESD Class; JESD22-A114-HBM
Rev.1.7
Page 1
2012-11-26

BSP315P Related Products

BSP315P BSP315P-E6327 BSP315PH6327
Description 1.17 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET mosfet P-CH 60v 1.17a sot-223 Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 1.17A Gate-source threshold voltage: 2V @ 160uA Drain-source on-resistance: 800mΩ @ 1.17A, 10V Maximum power dissipation ( Ta=25°C): 1.8W Type: P channel P channel, 60V, 1.17A, 800mΩ@10V
Is it Rohs certified? conform to incompatible conform to
Reach Compliance Code compli unknown compliant
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE Single SINGLE WITH BUILT-IN DIODE
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL
surface mount YES YES YES
Is it lead-free? Lead free - Lead free
package instruction SMALL OUTLINE, R-PDSO-G4 - SMALL OUTLINE, R-PDSO-G4
Contacts 4 - 4
Other features AVALANCHE RATED, LOGIC LEVEL COMPATIBLE - AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 24 mJ - 24 mJ
Shell connection DRAIN - DRAIN
Minimum drain-source breakdown voltage 60 V - 60 V
Maximum drain current (Abs) (ID) 1.17 A 1.17 A -
Maximum drain current (ID) 1.17 A - 1.17 A
Maximum drain-source on-resistance 0.8 Ω - 0.8 Ω
JESD-30 code R-PDSO-G4 - R-PDSO-G4
JESD-609 code e3 - e3
Humidity sensitivity level 1 1 -
Number of components 1 - 1
Number of terminals 4 - 4
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260
Maximum power dissipation(Abs) 1.8 W 1.8 W -
Maximum pulsed drain current (IDM) 4.68 A - 4.68 A
Terminal surface Matte Tin (Sn) - Matte Tin (Sn)
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature 40 - 40
Transistor component materials SILICON - SILICON
Base Number Matches 1 - 1
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