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SD453N25S30PC

Description
450 A, 2500 V, SILICON, RECTIFIER DIODE, DO-203AA
CategoryDiscrete semiconductor    diode   
File Size181KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

SD453N25S30PC Overview

450 A, 2500 V, SILICON, RECTIFIER DIODE, DO-203AA

SD453N25S30PC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-MUPM-D1
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresSNUBBER DIODE, FREE WHEELING DIODE
applicationHIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.85 V
JEDEC-95 codeDO-203AA
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current10050 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Maximum output current450 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2500 V
Maximum reverse recovery time3 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Base Number Matches1
Bulletin I2076 rev. A 09/94
SD453N/R SERIES
FAST RECOVERY DIODES
Stud Version
Features
High power FAST recovery diode series
2.0 to 3.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version case style B-8
Maximum junction temperature 150°C
400A
450A
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
V
RRM
range
t
rr
@ T
J
T
J
SD453N/R
S20
400
70
630
9300
9730
Units
A
°C
A
A
A
V
µs
°C
°C
S30
450
70
710
9600
10050
1200 to 2500 1200 to 2500
2.0
25
- 40 to 150
3.0
25
case style
B-8
www.irf.com
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