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BAS16-TP

Description
Rectifier Diode, 1 Element, 0.3A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size190KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

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BAS16-TP Overview

Rectifier Diode, 1 Element, 0.3A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

BAS16-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum output current0.3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.35 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Base Number Matches1
MCC
Micro Commercial Components
TM
20736 Marilla
Street Chatsworth

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$ %    !"#
BAS16
Features
Low Current Leakage
Low Cost
Small Outline Surface Mount Package
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking :A6
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
350mW 100Volt
Switching Diode
SOT-23
A
D
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 357K/W Junction To Ambient
F
E
C
B
G
H
J
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
Peak Forward
Current
Power Dissipation
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Reverse Recovery
Time
V
R
V
RM
I
F
P
TOT
I
FSM
V
F
75V
100V
300mA
350mW
1A
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
DIMENSIONS
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
t=1s, None Repet.
1.25V
I
R
1µA
50µA
2pF
I
FM
= 150mA;
T
J
= 25°C*
V
R
=75Volts
T
J
= 25°C
T
J
= 150°C
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
Measured at
1.0MHz, V
R
=0V
T
rr
4ns
I
F
=10mA
V
R
= 6.0V
R
L
=100Ω
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
C
J
.037
.950
.037
.950
Revision:
B
www.mccsemi.com
1 of 3
2013/01/01

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