3DFN32G08VS8633CN-00 datasheet, PDF

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3DFN32G08VS8633CN-00: DescriptionFlash, 4GX8, PDSO50, SOP-50; Categorystorage storage; File Size216KB，2 Pages; Manufacturer3D PLUS

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3DFN32G08VS8633CN-00 Overview

Flash, 4GX8, PDSO50, SOP-50

3DFN32G08VS8633CN-00 Parametric

Parameter Name	Attribute value
Objectid	1383375533
package instruction	SSOP,
Reach Compliance Code	unknown
ECCN code	EAR99
JESD-30 code	R-PDSO-G50
length	19 mm
memory density	34359738368 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	50
word count	4294967296 words
character code	4000000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4GX8
Package body material	PLASTIC/EPOXY
encapsulated code	SSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, SHRINK PITCH
Parallel/Serial	PARALLEL
Programming voltage	2.7 V
Maximum seat height	12.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
width	13.64 mm

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MEMORY MODULE

FLASH Nand 4Gx8-SOP

Flash Memory

MODULE

3D FN32G08VS8633

32Gbit Flash Nand organized as 4Gx8, based on 512MGx8

Pin Assignment (Top View)

SOP 50 (Pitch : 0.50 mm)

Features

- Organization

-Memory Cell Array (512M+16.384KM)bitx8.

- Automatic Program and Erase

Page Program: (2K+64) Byte/Bank

Block Erase: (128K+4K) Byte/Bank

- Single +3.3



0.3V power supply operation.

- Page Read Operation

Random READ: 25s (Max.)

Sequential READ: 25ns (Min.)

- Fast write Cycle Time

Program page: 220s (Typ.)

Block Erase Time: 1.5ms (Typ.)

Command/Address/Data Multiplexed I/O Port

- Hardware Data Protection

Program/Erase Lockout During Power Transitions

- Reliable CMOS Floating-Gate Technology

Endurance: 100K Program/Erase Cycles

Data Retention: 10 Years

- Command Register Operation

- Intelligent Copy-Back Operation

- Power-On auto-read enabled

General Description

The 3DFN32G08VS8633 is a high-density non-volatile CMOS NAND FLASH

module organized as 8x512Mx8bit.

Using high performance and high-reliability CMOS technology chips,

stacking with the well-known 3D Plus MCM-V technology, this FLASH

memory module provides a cost-effective solution for low power and high-

capacity non-volatile memory data storage needs, such as voice recording

and image file memory for still camera.

Each device of the module is a 4Gbit (with spare 128Mbit) NAND FLASH,

organized as 512Mx8bit, and can be accessed by activating the associated

control signal (#CEn, #Wen, #Ren). A program operation programs the 2112-

bytex8 page in typical 300µs and an erase operation can be performed in

typical 2ms on a 128K-byte block. Data in the data page can be read out at

30ns cycle time per byte. The I/O pins serve as the ports for address and

data input/output as well as command input. The on-chip write controller

automates all program and erase functions including pulse repetition, where

required, and internal verification and margining of data. Even the write-

intensive system can take advantage of the 3DFN32G08VS8633 extended

reliability of 100K program/erase cycles by providing ECC (Error Correcting

Code) with real time mapping-out algorithm.

The 3DFN32G08VS8633 module is package in a 50 SOP Package and is

available for Commercial and Industrial or military temperature range.

FUNCTIONAL BLOCK DIAGRAM

(All other signals are common to the eights memories)

FLASH Memory Module

PRELIMINARY

3D Plus SA reserves the right to cancel product or specifications without notice

3DFP-0633-REV 1-AUG. 2013

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