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BZV55-B3V9T/R

Description
DIODE 3.9 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode
CategoryDiscrete semiconductor    diode   
File Size61KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BZV55-B3V9T/R Overview

DIODE 3.9 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode

BZV55-B3V9T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionHERMETIC SEALED, GLASS PACKAGE-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance90 Ω
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.4 W
Certification statusNot Qualified
Nominal reference voltage3.9 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance2%
Working test current5 mA
Base Number Matches1
BZV55 series
Voltage regulator diodes
Rev. 04 — 19 July 2007
Product data sheet
1. Product profile
1.1 General description
Low-power voltage regulator diodes in small hermetically sealed glass SOD80C
Surface-Mounted Device (SMD) packages. The diodes are available in the normalized
E24
±2
% (BZV55-B) and approximately
±5
% (BZV55-C) tolerance range. The series
consists of 37 types with nominal working voltages from 2.4 V to 75 V.
1.2 Features
I
Non-repetitive peak reverse power
dissipation:
40 W
I
Total power dissipation:
500 mW
I
Two tolerance series:
±2
% and
±5
%
I
Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
I
Low differential resistance
I
Small hermetically sealed glass SMD
package
1.3 Applications
I
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
ZSM
[1]
Quick reference data
Parameter
forward voltage
non-repetitive peak reverse
power dissipation
Conditions
I
F
= 10 mA
[1]
Min
-
-
Typ
-
-
Max
0.9
40
Unit
V
W
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
k
a
1
2
006aaa152
[1]
The marking band indicates the cathode.
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