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3.0SMCJ200A-W

Description
Trans Voltage Suppressor Diode,
CategoryDiscrete semiconductor    diode   
File Size161KB,7 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Download Datasheet Parametric View All

3.0SMCJ200A-W Overview

Trans Voltage Suppressor Diode,

3.0SMCJ200A-W Parametric

Parameter NameAttribute value
MakerRectron Semiconductor
Reach Compliance Codecompliant
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches1
3.0SMCJ
series
3000W SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
FEATURES
* 3000W peak pulse power capability with
a 10/1000 s waveform
* Excellent clamping capability
* Low inductance
* High temperature soldering : 250 C/10
seconds at terminals.
* Built-in strain relief
* P/N suffix V means AEC-Q101 qualified, e.g:3.0SMCJ11V
* P/N suffix V means Halogen-free
*
*
*
*
Case : SMC Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Mounting position : Any
7.5
r
0.15
8.0
r
0.15
DO-214AB
MECHANICAL DATA
1.1
r
0.3
3.0
r
0.2
5.8
r
0.15
2.3
r
0.2
0.2
r
0.07
DEVICESFORBIPOLARAPPLICATION
For Bi-directional use C or CA Suffix
Electrical characteristics apply in both directions
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
o
RATINGS
Peak Pulse Power Dissipation on 10/1000 s waveform
(Note1,Note2)
Peak Pulse Current on 10/1000 s waveform (Note1)
Peak Forward Surge Current, 8.3ms single half sine wave-
superimposed on ratedload(Note2,Note3)
SYMBOL
P
PPM
I
PPM
VALUE
3000
SEE NEXT TABLE
300
373
-55 to + 150
UNITS
Watts
Amps
I
FSM
I
2
T
T
J
, T
STG
Amps
AS
0
Current Squared Time
Operating Junction and Storage Temperature Range
2
C
NOTES : 1. Non-repetitive Current pulse, per Fig. 3 and derated above Ta = 25 C per Fig. 1
2. Mounted on 5.0 mm2 (0.013 thick) land areas.
3. Measured on 8.3 ms , single half sine-wave or equivalent square wave, duty cycle=4 pulses per minutes maximum.
4.
"
ROHS compliant".
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