AO7402
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7402 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V, in the small SOT323 footprint. It can
be used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters.
Standard Product AO7402 is Pb-free (meets ROHS
& Sony 259 specifications). AO7402L is a Green Product
ordering option. AO7402 and AO7402L are electrically
identical.
SC-70
(SOT-323)
Top View
G
D
S
G
S
Features
V
DS
(V) = 20V
I
D
= 1.6 A (V
GS
= 4.5V)
R
DS(ON)
< 90mΩ (V
GS
= 4.5V)
R
DS(ON)
< 105mΩ (V
GS
= 2.5V)
R
DS(ON)
< 130mΩ (V
GS
= 1.8V)
D
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
A
Maximum
20
±8
1.6
1.2
10
0.35
0.22
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
T
A
=70°C
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
300
340
280
Max
360
425
320
Units
°C/W
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.
AO7402
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=16V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=1.6A
T
J
=125°C
0.4
10
75
106
86
103
5.5
0.69
90
130
105
130
1
0.5
458
76
54
3
6.05
0.7
1.45
7.3
5.6
40
11
12.2
3.23
0.55
Min
20
1
5
100
0.8
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
g
FS
V
SD
I
S
V
GS
=2.5V, I
D
=1.5A
V
GS
=1.8V, I
D
=1.4A
Forward Transconductance
V
DS
=5V, I
D
=1.6A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
t
D(off)
t
f
t
rr
Q
rr
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=10V, I
D
=1.6A
V
GS
=5V, V
DS
=10V, R
L
=6.25Ω,
R
GEN
=6Ω
I
F
=1.6A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge I
F
=1.6A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev
3: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO7402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
8V
10
4.5V
8
2V
I
D
(A)
3V
2.5V
6
4
4
V
GS
=1.5V
2
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
V
DS
(Volts)
Fig 1: On-Region Characteristics
140
Normalized On-Resistance
1.6
V
GS
=2.5V
1.4
I
D
=1.6A
V
GS
=4.5V
1.2
V
GS
=1.8V
V
GS
(Volts)
Figure 2: Transfer Characteristics
V
DS
=5V
25°C
125°C
12
I
D
(A)
8
0
120
R
DS(ON)
(m
Ω
)
V
GS
=1.8V
100
V
GS
=2.5V
80
V
GS
=4.5V
60
0
2
4
6
8
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
160
140
R
DS(ON)
(m
Ω
)
120
125°C
100
25°C
80
60
1
2
3
4
5
6
7
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
1E+00
I
D
=1.6A
1E-01
I
S
(A)
1E-02
25°C
1E-03
1E-04
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
Alpha & Omega Semiconductor, Ltd.
AO7402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
0
0
2
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=10V
I
D
=1.6A
800
Capacitance (pF)
600
C
iss
400
200
C
oss
C
rss
0
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
T
J(Max)
=150°C
T
A
=25°C
16
100µs
12
10µs
0.1s
10ms 1ms
Power (W)
T
J(Max)
=150°C
T
A
=25°C
I
D
(Amps)
10.0 R
DS(ON)
limited
8
1.0
1s
10s
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
DC
4
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=360°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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