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5082-3188

Description
35V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size124KB,4 Pages
ManufacturerAVAGO
Websitehttp://www.avagotech.com/
Download Datasheet Parametric Compare View All

5082-3188 Overview

35V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2

5082-3188 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
Other featuresLOW HARMONIC DISTORTION
applicationSWITCHING
Minimum breakdown voltage35 V
Shell connectionISOLATED
ConfigurationSINGLE
Maximum diode capacitance1 pF
Nominal diode capacitance1 pF
Diode component materialsSILICON
Maximum diode forward resistance0.6 Ω
Diode resistance test current10 mA
Diode resistance test frequency100 MHz
Diode typePIN DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeO-LALF-W2
JESD-609 codee0
Minority carrier nominal lifetime0.07 µs
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.25 W
Certification statusNot Qualified
Reverse test voltage20 V
surface mountNO
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N5719, 1N5767, 5082-3001, 5082-3039,
5082-3077, 5082-3080/81, 5082-3188, 5082-3379
PIN Diodes for RF Switching and Attenuating
Data Sheet
Description/Applications
These general purpose switching diodes are intended for
low power switching applications such as RF duplexers,
antenna switching matrices, digital phase shifters, and time
multiplex filters. The 5082-3188 is optimized for VHF/UHF
bandswitching.
The RF resistance of a PIN diode is a function of the current
flowing in the diode. These current controlled resistors are
specified for use in control applications such as variable RF
attenuators, automatic gain control circuits, RF modula-
tors, electrically tuned filters, analog phase shifters, and
RF limiters.
Outline 15 diodes are available on tape and reel. The tape
and reel specification is patterned after RS-296-D.
Features
• Low Harmonic Distortion
• Large Dynamic Range
• Low Series Resistance
• Low Capacitance
Outline 15
0.41 (.016)
0.36 (.014)
25.4 (1.00)
MIN.
1.93 (.076)
1.73 (.068)
Maximum Ratings
Junction Operating and
Storage Temperature Range.........................-65°C to +150°C
Power Dissipation 25°C .................................................250 mW
(Derate linearly to zero at 150°C)
Peak Inverse Voltage (PIV) ...................................... same as V
BR
Maximum Soldering Temperature ............... 260°C for 5 sec
CATHODE
4.32 (.170)
3.81 (.150)
25.4 (1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).

5082-3188 Related Products

5082-3188 5082-3077
Description 35V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2 200V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2
Is it Rohs certified? incompatible incompatible
package instruction O-LALF-W2 O-LALF-W2
Contacts 2 2
Reach Compliance Code unknown compliant
Other features LOW HARMONIC DISTORTION LOW HARMONIC DISTORTION
application SWITCHING ATTENUATOR; SWITCHING
Minimum breakdown voltage 35 V 200 V
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Maximum diode capacitance 1 pF 0.3 pF
Nominal diode capacitance 1 pF 0.3 pF
Diode component materials SILICON SILICON
Maximum diode forward resistance 0.6 Ω 1.5 Ω
Diode resistance test current 10 mA 100 mA
Diode resistance test frequency 100 MHz 100 MHz
Diode type PIN DIODE PIN DIODE
JESD-30 code O-LALF-W2 O-LALF-W2
JESD-609 code e0 e0
Minority carrier nominal lifetime 0.07 µs 0.1 µs
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.25 W 0.25 W
Certification status Not Qualified Not Qualified
Reverse test voltage 20 V 50 V
surface mount NO NO
technology POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
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