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5KP7.0CA

Description
Trans Voltage Suppressor Diode, 5000W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AR
File Size318KB,4 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

5KP7.0CA Overview

Trans Voltage Suppressor Diode, 5000W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AR

5KP7.0CA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid4016649587
package instructionPLASTIC, CASE 5A, 2 PIN
Reach Compliance Codecompliant
YTEOL6.94
Maximum breakdown voltage8.6 V
Minimum breakdown voltage7.78 V
Breakdown voltage nominal value8.19 V
Shell connectionISOLATED
Maximum clamping voltage12 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-204AR
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation5000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation1.56 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage7 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
5KP5.0 thru 5KP110CA
Transient Voltage Suppressor
Breakdown Voltage 5.0 to 110 Volts
Peak Pulse Power
5000 Watts
Features
CASE: R-6
Breakdown Voltages (V
BR
) from 5.0 to 110V
5000W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.05%
Fast Response Time
Low incremental surge resistance
Excellent clamping capability
Available in uni-directional and bi-directional
High temperature soldering guaranteed: 265
/10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
Application
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
@
Symbol
P
PPM
I
PPM
P
M(AV)
V
F
R
θJL
R
θJA
T
J,
T
STG
Conditions
Peak pulse power capability with a 10/1000μs
Peak pulse current with a 10/1000μs
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on IC
S
, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication.
Case:
Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals:
Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking:
Body marked with part number
Polarity:
Band denotes cathode. Bidirectional not
marked.
Weight:
2.1g(Approximately)
25
O
C unless otherwise specified
Mechanical Data
Value
5000
SEE TABLE1
6
1.56
3.5
20
80
-65 to +150
Unit
W
A
W
W
V
℃/W
℃/W
Steady state power dissipation at T
L
=30℃ ,Lead lengths 0.375”(10mm)
Steady state power dissipation at T
A
=25℃ when mounted on FR4 PC
described for thermal resistance
Maximum instantaneous forward voltage at 100A for unidirectional only
Thermal resistance junction to lead
Thermal resistance junction to ambient
Operating and Storage Temperature
Document Number: 5KP5.0 thru 5KP110CA
Feb.29, 2012
www.smsemi.com
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