MT47H512M4THN-3:M datasheet, PDF

MT47H512M4THN-3:M: DescriptionDDR DRAM,; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT47H512M4THN-3:M Overview

DDR DRAM,

Parameter Name	Attribute value
Objectid	2069476937
Reach Compliance Code	compliant
ECCN code	EAR99
YTEOL	4.72
access mode	DUAL BANK PAGE BURST
Other features	SELF REFRESH
Maximum clock frequency (fCLK)	333.3 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B63
length	10 mm
memory density	2147483648 bit
Memory IC Type	DDR2 DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	63
word count	536870912 words
character code	512000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	512MX4
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA63,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Maximum standby current	0.02 A
Maximum slew rate	0.205 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	8 mm

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