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DF3A6.2FE

Description
product for use only as protection against electrostatic discharge (esd).
CategoryDiscrete semiconductor    diode   
File Size155KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

DF3A6.2FE Overview

product for use only as protection against electrostatic discharge (esd).

DF3A6.2FE Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Parts packaging codeSOD
package instruction1-2SA1A, ESM, 3 PIN
Contacts3
Reach Compliance Codeunknown
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-F3
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.1 W
Certification statusNot Qualified
Nominal reference voltage6.2 V
surface mountYES
technologyZENER
Terminal formFLAT
Terminal locationDUAL
Maximum voltage tolerance6.45%
Working test current5 mA
Base Number Matches1
DF2S12S
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S12S
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
2terminal ultra small package suitable for mounting on small space.
Low total capacitance: C
T
= 15 pF (typ.)
CATHODE MARK
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P*
T
j
T
stg
Rating
150
150
−55~150
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
reliability significantly even if the operating conditions (i.e.
TOSHIBA
1-1K1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.001 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*:
Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
Symbol
V
Z
Z
Z
I
R
C
T
Test
Circuit
Test Condition
I
Z
= 5 mA
I
Z
= 5 mA
V
R
=9 V
V
R
= 0 V, f = 1 MHz
Min
11.4
Typ.
12.0
15
Max
12.6
25
0.05
Unit
V
Ω
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(contact discharge)
ESD Immunity Level
±
20 kV
Criterion: No damage to device elements
1
2007-11-01

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