BCR162...
PNP Silicon Digital Transistor
•
Switching circuit, inverter, interface circuit,
driver circuit
•
Built in bias resistor
(R
1
= 4.7kΩ ,
R
2
= 4.7kΩ )
BCR162/F/L3
BCR162T
C
3
R
1
R
2
1
B
2
E
EHA07183
Type
BCR162
BCR162F
BCR162L3
BCR162T
Marking
WUs
WUs
WU
WUs
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
Pin Configuration
2=C
2=C
2=C
2=C
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
1
Aug-29-2003
BCR162...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR162,
T
S
≤
102°C
BCR162F,
T
S
≤
128°C
BCR162L3,
T
S
≤
135°C
BCR162T,
T
S
≤
109°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BCR162
BCR162F
BCR162L3
BCR162T
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
Value
50
50
10
15
100
200
250
250
250
Unit
V
mA
mW
T
j
T
stg
Symbol
R
thJS
150
-65 ... 150
Value
≤
240
≤
90
≤
60
≤
165
°C
Unit
K/W
2
Aug-29-2003
BCR162...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
50
V
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R
1
R
1
/
R
2
50
-
-
20
-
0.8
1
3.2
0.9
-
-
-
-
-
-
-
-
-
4.7
1
200
3
-
100
1.61
-
0.3
1.5
2.5
6.2
1.1
-
-
kΩ
Collector-base cutoff current
V
CB
= 40 V,
I
E
= 0
nA
mA
-
V
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
DC current gain
1)
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
-
MHz
pF
f
T
C
cb
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1Pulse test: t < 300µs; D < 2%
3
Aug-29-2003
BCR162...
DC current gain
h
FE
=
ƒ
(
I
C
)
V
CE
= 5 V (common emitter configuration)
10
3
-
Collector-emitter saturation voltage
V
CEsat
=
ƒ
(
I
C
),
h
FE
= 20
10
2
10
2
mA
h
FE
10
1
I
C
10
1
10
0
10
-1 -1
10
0
1
10
10
mA
10
2
10
0
0
0.2
0.4
0.6
0.8
V
1.1
I
C
V
CEsat
Input on Voltage
V
i
(on)
=
ƒ
(
I
C
)
V
CE
= 0.3V (common emitter configuration)
10
2
Input off voltage
V
i(off)
=
ƒ
(
I
C
)
V
CE
= 5V (common emitter configuration)
10
1
mA
mA
10
1
10
0
I
C
10
0
I
C
10
-1
10
-1 -1
10
0
1
10
10
V
10
2
10
-2
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
V
2
V
i(on)
V
i(off)
4
Aug-29-2003
BCR162...
Total power dissipation
P
tot
=
ƒ
(
T
S
)
BCR162
300
Total power dissipation
P
tot
=
ƒ
(
T
S
)
BCR162F
300
mW
mW
P
tot
150
P
tot
120
°C
200
200
150
100
100
50
50
0
0
20
40
60
80
100
150
0
0
20
40
60
80
100
120
°C
150
T
S
T
S
Total power dissipation
P
tot
=
ƒ
(
T
S
)
BCR162L3
300
Total power dissipation
P
tot
=
ƒ
(
T
S
)
BCR162T
300
mW
mW
P
tot
150
P
tot
120
°C
200
200
150
100
100
50
50
0
0
20
40
60
80
100
150
0
0
20
40
60
80
100
120
°C
150
T
S
T
S
5
Aug-29-2003
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