MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
CR02AM
OUTLINE DRAWING
φ5.0
MAX
4.4
Dimensions
in mm
2
VOLTAGE
CLASS
TYPE
NAME
3
1
12.5 MIN
1
CATHODE
2
ANODE
3
GATE
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
1.3
5.0 MAX
0.47
0.3
10
0.4
0.1
0.01
6
6
0.1
0.23
3 2 1
• I
T (AV)
........................................................................ 0.3A
• V
DRM
.................................................... 200V/300V/400V
• I
GT
......................................................................... 100µA
JEDEC : TO-92
APPLICATION
Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher,
other general purpose control applications
MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
V1
V1
Voltage class
4
200
300
160
200
160
6
300
400
240
300
240
8
400
500
320
400
320
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine half wave, 180° conduction, T
a
=30°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
–40 ~ +125
–40 ~ +125
3.9 MAX
Unit
V
V
V
V
V
Unit
A
A
A
A
2
s
W
W
V
V
A
°C
°C
g
V1.
With Gate-to-cathode resistance R
GK
=1kΩ
Sep.2000
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-a)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Test conditions
T
j
=125°C, V
RRM
applied
T
j
=125°C, V
DRM
applied, R
GK
=1kΩ
T
a
=25°C, I
TM
=0.6A, instantaneous value
T
a
=25°C, V
D
=6V, I
T
=0.1A
V3
T
j
=125°C, V
D
=1/2V
DRM
, R
GK
=1kΩ
T
j
=25°C, V
D
=6V, I
T
=0.1A
Junction to ambient
V3
Limits
Min.
—
—
—
—
0.2
1
—
—
Typ.
—
—
—
—
—
—
—
—
Max.
0.1
0.1
1.6
0.8
—
100
V2
3
180
Unit
mA
mA
V
V
V
µA
mA
°C/W
T
j
=25°C, V
D
=12V, R
GK
=1kΩ
V2.
If special values of I
GT
are required, choose at least two items from those listed in the table below. (Example: AB, BC)
Item
I
GT
(µA)
A
1 ~ 30
B
20 ~ 50
C
40 ~ 100
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
V3.
I
GT
, V
GT
measurement circuit.
A1
I
GS
3V
DC
A3
R
GK
1
1kΩ
SWITCH
I
GT
A2
2
V1
V
GT
TUT
6V
DC
60Ω
SWITCH 1 : I
GT
measurement
SWITCH 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1kΩ)
PERFORMANCE CURVES
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
MAXIMUM ON-STATE CHARACTERISTICS
10
1
7 T
a
= 25°C
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
10
9
8
7
6
5
4
3
2
1
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Sep.2000
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
10
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
GATE VOLTAGE (V)
P
G(AV)
= 0.01W
V
GT
= 0.8V
I
GT
= 100µA
(T
j
= 25°C)
V
GD
= 0.2V
I
FGM
= 0.1A
10
0
10
–1
10
–2
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
GATE CURRENT (mA)
GATE CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
200
180
160
GATE CURRENT (T
j
= t
°C
)
GATE CURRENT (T
j
= 25°C)
140
120
100
80
60
40
20
See
∗3
#1
#2
GATE TRIGGER VOLTAGE (V)
TYPICAL EXAMPLE
I
GT
(25°C)
# 1 32µA
# 2 9µA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
1
V
FGM
= 6V
P
GM
= 0.1W
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
DISTRIBUTION
TYPICAL EXAMPLE
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
TRANSIENT THERMAL IMPEDANCE (°C/W)
180
160
140
120
100
80
60
40
20
0
10
–3
2 3 5 710
–2
2 3 5 710
–1
2 3 5 7 10
0
TIME (s)
AVERAGE POWER DISSIPATION (W)
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
200
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
0.8
0.7
0.6
0.5
60°
0.4
0.3
0.2
0.1
0
0
θ
360°
RESISTIVE, INDUCTIVE LOADS
0.4
0.1
0.2
0.3
θ
= 30°
90°
120°
180°
AVERAGE ON-STATE CURRENT (A)
Sep.2000
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
140
120
100
80
60
40
20
0
0
θ
= 30° 60° 90° 120°
0.1
0.2
AVERAGE POWER DISSIPATION (W)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
AMBIENT TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
0.8
0.7
0.6
90°
0.5
0.4
0.3
0.2
0.1
0
0
0.1
0.2
θ
θ
θ
= 30°
60°
120°
180°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
180°
0.3
0.4
360°
RESISTIVE LOADS
0.5
0.3
0.4
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
AMBIENT TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.1
0.2
60°
θ
= 30°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
0.5
0.3
0.4
90°
180°
120°
DC
270°
140
120
100
80
60
40
20
0
0
θ
= 30°
0.1
60°
0.2
θ
θ
360°
RESISTIVE LOADS
NATURAL
CONVECTION
120°
90° 180°
0.3
0.4
0.5
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
NATURAL
CONVECTION
140
θ
120
100
80
60
40
20
0
0
0.1
360°
RESISTIVE,
INDUCTIVE
LOADS
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
160
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
R
GK
= 1kΩ
θ
= 30°
60°
90°
120°
180°
270°
DC
0.2
0.3
0.4
0.5
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
Sep.2000
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
100 (%)
120
100
TYPICAL EXAMPLE
T
j
= 125°C
100 (%)
BREAKOVER VOLTAGE (dv/dt = vV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
120
100
80
60
40
20
TYPICAL EXAMPLE
# 1 I
GT
(25°C)=10µA
# 2 I
GT
(25°C)=66µA
T
j
= 125°C, R
GK
= 1kΩ
#2
#1
BREAKOVER VOLTAGE (R
GK
= rkΩ)
BREAKOVER VOLTAGE (R
GK
= 1kΩ)
80
60
40
20
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
GATE TO CATHODE RESISTANCE (kΩ)
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
100 (%)
500
HOLDING CURRENT (mA)
T
j
= 25°C
I
H
(25°C)=1mA
I
GT
(25°C)=25µA
400
HOLDING CURRENT (R
GK
= rkΩ)
HOLDING CURRENT (R
GK
= 1kΩ)
#1
300
TYPICAL EXAMPLE
I
GT
(25°C) I
H
(1kΩ)
# 1 13µA
1.6mA
# 2 59µA
1.8mA
DISTRIBUTION
TYPICAL
EXAMPLE
#2
200
100
T
j
= 25°C
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
GATE TO CATHODE RESISTANCE (kΩ)
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= t°C)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= 25°C)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
10
2
7
5
4
3
2
T
j
= 25°C
10
1
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
TYPICAL EXAMPLE
I
GT
(25°C)
#1
# 1 10µA
#2
# 2 66µA
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
GATE CURRENT PULSE WIDTH (µs)
Sep.2000
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