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UNR211V

Description
Composite Device - Transistors with built-in Resistor
CategoryDiscrete semiconductor    The transistor   
File Size357KB,17 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

UNR211V Overview

Composite Device - Transistors with built-in Resistor

UNR211V Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeSC-59
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)6
JESD-30 codeR-PDSO-G3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
Transistors with built-in Resistor
UNR211x Series
(UN211x Series)
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
1
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
2
(0.65)
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
Resistance by Part Number
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
UNR2119
UNR211D
UNR211E
UNR211F
UNR211H
UNR211L
UNR211M
UNR211N
UNR211T
UNR211V
UNR211Z
Marking Symbol (R
1
)
(UN2110)
6L
47 kΩ
(UN2111)
6A
10 kΩ
(UN2112)
6B
22 kΩ
(UN2113)
6C
47 kΩ
(UN2114)
6D
10 kΩ
(UN2115)
6E
10 kΩ
(UN2116)
6F
4.7 kΩ
(UN2117)
6H
22 kΩ
(UN2118)
6I
0.51 kΩ
(UN2119)
6K
1 kΩ
(UN211D)
6M
47 kΩ
(UN211E)
6N
47 kΩ
(UN211F)
6O
4.7 kΩ
(UN211H)
6P
2.2 kΩ
(UN211L)
6Q
4.7 kΩ
(UN211M) EI
2.2 kΩ
(UN211N)
EW
4.7 kΩ
(UN211T)
EY
22 kΩ
(UN211V)
FC
2.2 kΩ
(UN211Z)
FE
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
10˚
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
R
1
B
R
2
E
C
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−100
200
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00006CED
0 to 0.1
0.4
±0.2
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