Transistors with built-in Resistor
UNR4221/4222/4223/4224
(UN4221/4222/4223/4224)
Silicon NPN epitaxial planar type
For digital circuits
■
Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
New S type package, allowing supply with the radial taping
0.75 max.
Unit: mm
4.0
±0.2
2.0
±0.2
(0.8)
3.0
±0.2
0.45
+0.20
–0.10
15.6
±0.5
(0.8)
7.6
■
Resistance by Part Number
•
•
•
•
UNR4221
UNR4222
UNR4223
UNR4224
(UN4221)
(UN4222)
(UN4223)
(UN4224)
(R
1
)
2.2 kΩ
4.7 kΩ
10 kΩ
2.2 kΩ
(R
2
)
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
(2.5) (2.5)
0.45
+0.20
–0.10
0.7
±0.1
1
2
3
1: Emitter
2: Collector
3: Base
NS-B1 Package
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
500
300
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Internal Connection
R
1
B
R
2
E
C
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
cutoff current
(Collector open)
Forward current
transfer ratio
UNR4221
UNR4222
UNR4223/4224
UNR4221
UNR4222
UNR4223/4224
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
V
CE(sat)
V
OH
V
OL
I
C
=
100 mA, I
B
=
5 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
500
Ω
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
500
Ω
4.9
0.2
h
FE
V
CE
=
10 V, I
C
=
100 mA
40
50
60
0.25
V
V
V
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
Min
50
50
1.0
1.0
5.0
2.0
1.0
Typ
Max
Unit
V
V
µA
µA
mA
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00021BED
1
UNR4221/4222/4223/4224
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Transition frequency
Input resistance
UNR4221/4224
UNR4222
UNR4223
Resistance ratio
UNR4224
R
1
/R
2
0.8
0.17
Symbol
f
T
R
1
Conditions
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
−30%
Min
Typ
200
2.2
4.7
10
1.0
0.22
1.2
0.27
+30%
Max
Unit
MHz
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
400
Total power dissipation P
T
(mW)
300
200
100
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
Characteristics charts of UNR4221
I
C
V
CE
I
B
=
1.0 mA
250
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
2
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= 10 V
300
Collector current I
C
(mA)
0.9 mA
200
0.8 mA
0.7 mA
150
0.6 mA
0.5 mA
100
0.4 mA
0.3 mA
50
0.2 mA
0
0.1 mA
10
12
Forward current transfer ratio h
FE
10
300
T
a
=
75°C
1
T
a
=
75°C
25°C
10
−1
−25°C
10
−2
200
25°C
100
−25°C
0
10
2
10
3
0
2
4
6
8
1
10
1
10
10
2
10
3
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
2
SJH00021BED
UNR4221/4222/4223/4224
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
24
f
=
1 MHz
I
E
=
0
T
a
=
25°C
10
4
I
O
V
IN
V
O
=
5 V
T
a
=
25°C
V
IN
I
O
10
2
V
O
=
0.2 V
T
a
=
25°C
20
Output current I
O
(µA)
16
15
10
2
Input voltage V
IN
(V)
10
3
10
1
8
10
10
−1
4
0
10
−1
1
10
10
2
1
0.4
0.6
0.8
1.0
1.2
1.4
10
−2
10
−1
1
10
10
2
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR4222
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
2
I
C
/ I
B
=
10
h
FE
I
C
200
V
CE
= 10 V
300
Forward current transfer ratio h
FE
250
Collector current I
C
(mA)
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
T
a
=
75°C
150
25°C
10
200
150
1
T
a
=
75°C
25°C
100
−25°C
100
0.4 mA
0.3 mA
10
−1
−25°C
10
−2
50
50
0.2 mA
0.1 mA
0
0
2
4
6
8
10
12
1
10
10
2
10
3
0
1
10
10
2
10
3
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
12
f
=
1 MHz
I
E
=
0
T
a
=
25°C
10
4
I
O
V
IN
V
O
=
5 V
T
a
=
25°C
10
2
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
10
Output current I
O
(µA)
8
6
10
2
Input voltage V
IN
(V)
10
3
10
1
4
10
10
−1
2
0
10
−1
1
10
10
2
1
0.4
0.6
0.8
1.0
1.2
1.4
10
−2
10
−1
1
10
10
2
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00021BED
3
UNR4221/4222/4223/4224
Characteristics charts of UNR4223
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
2
I
C
/ I
B
=
10
200
V
CE
= 10 V
h
FE
I
C
240
200
Forward current transfer ratio h
FE
T
a
=
75°C
150
25°C
Collector current I
C
(mA)
10
160
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
120
1
25°C
10
−1
−25°C
10
−2
T
a
=
75°C
100
−25°C
50
80
0.5 mA
0.4 mA
40
0.3 mA
0.2 mA
0.1 mA
0
0
2
4
6
8
10
12
1
10
10
2
10
3
0
1
10
10
2
10
3
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
12
f
=
1 MHz
I
E
=
0
T
a
=
25°C
10
3
I
O
V
IN
V
O
=
5 V
T
a
=
25°C
V
IN
I
O
10
2
V
O
=
0.2 V
T
a
=
25°C
10
Output current I
O
(µA)
10
3
8
6
10
2
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
10
1
4
10
10
−1
2
0
10
−1
1
10
10
2
1
0.4
10
−2
10
−1
1
10
10
2
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR4224
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
2
h
FE
I
C
200
V
CE
= 10 V
300
I
C
/ I
B
=
10
250
Forward current transfer ratio h
FE
T
a
=
75°C
150
25°C
Collector current I
C
(mA)
10
200
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
−25°C
100
150
1
T
a
=
75°C
25°C
100
10
−1
−25°C
10
−2
50
50
0.3 mA
0.2 mA
0.1 mA
0
0
1
10
10
2
10
3
0
2
4
6
8
10
12
1
10
10
2
10
3
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
4
SJH00021BED
UNR4221/4222/4223/4224
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
12
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
10
3
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
10
Output current I
O
(µA)
10
3
8
5
10
2
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
10
2
10
4
10
1
2
0
10
−1
1
10
10
2
1
0.4
10
−1
10
−1
1
10
10
2
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00021BED
5
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