Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 145288189732 |
| Reach Compliance Code | unknown |
| Country Of Origin | USA |
| YTEOL | 7.18 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 1 A |
| Collector-based maximum capacity | 10 pF |
| Collector-emitter maximum voltage | 350 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 40 |
| JEDEC-95 code | TO-5 |
| JESD-30 code | O-MBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 200 °C |
| Minimum operating temperature | -65 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 0.8 W |
| Maximum power dissipation(Abs) | 5 W |
| Certification status | Qualified |
| Guideline | MIL-19500 |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 10000 ns |
| Maximum opening time (tons) | 1000 ns |
| VCEsat-Max | 0.5 V |
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