Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Objectid | 104351894 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| YTEOL | 2 |
| Maximum access time | 5.4 ns |
| Maximum clock frequency (fCLK) | 167 MHz |
| I/O type | COMMON |
| interleaved burst length | 1,2,4,8 |
| JESD-30 code | R-PBGA-B90 |
| memory density | 134217728 bit |
| Memory IC Type | SYNCHRONOUS DRAM |
| memory width | 32 |
| Number of terminals | 90 |
| word count | 4194304 words |
| character code | 4000000 |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | -25 °C |
| organize | 4MX32 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | FBGA |
| Encapsulate equivalent code | BGA90,9X15,32 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, FINE PITCH |
| Certification status | Not Qualified |
| refresh cycle | 4096 |
| Continuous burst length | 1,2,4,8,FP |
| Maximum standby current | 0.0005 A |
| Maximum slew rate | 0.18 mA |
| surface mount | YES |
| technology | CMOS |
| Temperature level | OTHER |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
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