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TA6F13AHM3/6B

Description
tvs diode 11.1vwm 18.2vc do221a
CategoryCircuit protection   
File Size102KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
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TA6F13AHM3/6B Overview

tvs diode 11.1vwm 18.2vc do221a

TA6F6.8A thru TA6F51A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Very low profile - typical height of 0.95 mm
SlimSMA
TM
• Junction passivation optimized design
passivated anisotropic rectifier technology
• T
J
= 185 °C capability suitable for high
reliability and automotive requirement
• Ideal for automated placement
• Uni-directional only
• Excellent clamping capability
• Peak pulse power: 600 W (10/1000 μs)
• AEC-Q101 qualified
• ESD capability: IEC 61000-4-2 level 4
- 15 kV (air)
- 8 kV (contact)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Top View
Bottom View
DO-221AC
PRIMARY CHARACTERISTICS
V
BR
V
WM
P
PPM
(10 x 1000 μs)
P
D
at T
M
= 65 °C
T
J
max.
Polarity
Package
6.8 V to 51 V
5.8 V to 43.6 V
600 W
6W
185 °C
Uni-directional
DO-221AC (SlimSMA)
MECHANICAL DATA
Case:
DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....)
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
HM3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
per
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Peak pulse power dissipation
Peak pulse current
with a 10/1000 μs waveform
with a 10/1000 μs waveform
SYMBOL
P
PPM (1)
I
PPM (1)
P
D (2)
P
D (3)
T
J
, T
STG
VALUE
600
See next table
6
1.1
-65 to +185
UNIT
W
A
W
°C
Power dissipation on infinite heat sink, T
M
= 65 °C
Power dissipation, T
M
= 25 °C
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2)
Power dissipation mounted on infinite heat sink
(3)
Power dissipation mounted on minimum recommended pad layout
Revision: 18-Apr-16
Document Number: 89939
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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