KTC3770F-C datasheet, PDF - EEWORLD Datasheet

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KTC3770F-C: DescriptionRF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TFSM, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size396KB，5 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTC3770F-C Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TFSM, 3 PIN

KTC3770F-C Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	1 pF
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	7000 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

VHF/UHF WIDE BAND AMPLIFIER APPLICATION.

KTC3770F

EPITAXIAL PLANAR NPN TRANSISTOR

FEATURES

・Low

Noise Figure, High Gain.

・NF=1.1dB,

21e

=11dB (f=1GHz).

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

SYMBOL

CBO

CEO

EBO

stg

RATING

100

150

-55½150

UNIT

DIM

MILLIMETERS

0.6 + 0.05

0.8 + 0.05

0.38+0.02/-0.04

0.2 + 0.05

_ 0.05

1.0 +

0.35+ 0.05

_ 0.05

0.1 +

0.15 + 0.05

℃

1. EMITTER

2. BASE

3. COLLECTOR

TFSM

Marking

Type Name

Rank

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector Output Capacitance

Reverse Transfer Capacitance

Transition Frequency

Insertion Gain

Noise Figure

SYMBOL

CBO

EBO

(Note1)

=10V, I

=0, f=1MHz (Note2)

21e

=10V, I

=20mA

=10V, I

=20mA, f=1GHz

=10V, I

=7mA, f=1GHz

7.5

0.65

11.5

1.1

1.15

GHz

TEST CONDITION

=10V, I

=1V, I

=10V, I

=20mA

MIN.

TYP.

MAX.

250

1.0

UNIT

Note 1 : h

Classification

A:50~100, B:80~160, C:125~250.

Note 2 : C

is measured by 3 terminal method with capacitance bridge.

2005. 4. 7

Revision No : 0

1/5

KTC3770F-C Related Products

	KTC3770F-C	KTC3770F-A	KTC3770F-B
Description	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TFSM, 3 PIN	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TFSM, 3 PIN	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TFSM, 3 PIN
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-based maximum capacity	1 pF	1 pF	1 pF
Collector-emitter maximum voltage	12 V	12 V	12 V
Configuration	SINGLE	SINGLE	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	7000 MHz	7000 MHz	7000 MHz
Base Number Matches	1	1	1

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