The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
•
Specified 150 Volt, 81.36 MHz Characteristics:
•
Output Power = 90 Watts.
•
Gain = 13dB (Class C)
•
Efficiency = 75%
MAXIMUM RATINGS
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θJC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
•
Low Cost Common Source RF Package.
•
Very High Breakdown for Improved Ruggedness.
•
Low Thermal Resistance.
•
Nitride Passivated Die for Improved Reliability.
All Ratings: T
C
= 25°C unless otherwise specified.
ARF449A/449B
UNIT
Volts
450
450
9
±30
165
0.76
-55 to 150
°C
Amps
Volts
Watts
°C/W
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
On State Drain Voltage
1
MIN
TYP
MAX
UNIT
Volts
450
4
25
µA
(I
D
(ON) = 5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
250
±100
3
2
5.8
5
nA
mhos
Volts
7-2003
050-4909 Rev C
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 150V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6½
MIN
TYP
ARF449A/449B
MAX
UNIT
980
87
25
5
3.1
15
3
1200
120
40
10
7
25
7
ns
pF
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
η
ψ
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 20:1
Test Conditions
f = 81.36 MHz
V
GS
= 0V
V
DD
= 150V
MIN
TYP
MAX
UNIT
dB
%
12
70
13
75
P
out
= 90W
No Degradation in Output Power
1
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
30
25
20
GAIN (dB)
3000
Class C
V
DD
= 150V
P
out
= 150W
CAPACITANCE (pf)
1000
500
Ciss
Coss
100
Crss
50
15
10
5
0
30
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
45
1
5
10
50
150
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
10
16
I
D
, DRAIN CURRENT (AMPERES)
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
50
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
10µS
100µS
12
10
5
1mS
8
10mS
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
5 10
50 100
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
100mS
DC
7-2003
4
TJ = +125°C
TJ = +25°C
0
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
TJ = -55°C
050-4909 Rev C
ARF449A/449B
1.2
1.1
1.0
0.9
0.8
I
D
, DRAIN CURRENT (AMPERES)
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
25
20
VGS=8, 10 & 15V
15
6.5V
6V
10
5.5V
0.7
0.6
-50 -25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
160
Class C
V
DD
= 150V
5
5V
4.5V
0
1
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
f = 81.36 MHz
120
G
PS
, COMMON SOURCE AMPLIFIER GAIN
(dB)
14
P
OUT
, POWER OUT (WATTS)
12
Class C
V
DD
= 150V
f = 81.36 MHz
80
10
40
8
0
0
4
6
8
10
P
IN
, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
2
40
80
120
160
P
OUT
, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
6
0
0.8
D=0.5
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.2
0.1
0.05
0.1
0.05
0.02
0.01
0.01
0.005
SINGLE PULSE
Note:
PDM
t1
t2
Duty Factor D = t1/t
2
Peak TJ = PDM x Z
θJC
+ TC
0.001
10
-5
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-4
10
Table 1 - Typical Class C Large Signal Input-Output Impedance
Freq. (MHz)
2.0
13.5
27.0
40.0
65.0
80.0
100.0
Z
in
(Ω)
23.00 - j 7.0
4.30 - j 9.1
1.00 - j 4.2
0.42 - j 1.7
0.35
+
j 1.1
0.56
+
j 2.5
0.90
+
j 3.8
Z
OL
(Ω)
93.0 - j 10
63.0 - j 43
32.0 - j 43
17.5 - j 34
7.7 - j 22
5.1 - j 16
3.4 - j 12
Z
in
-
gate shunted by 25Ω
Z
OL
-
conjugate of optimum load impedance for 150W at 150V
050-4909 Rev C
7-2003
ARF449A/449B
81.36 MHz Test Circuit
Parts List
C1 -- 680pF Unelco
C2-C4 -- Arco 463 Mica Trimmer
C5-C7 -- 1nF 500V COG chip
L1 -- 0.8" #18 AWG into hairpin ~19nH
L2-L3 -- 3t #18 AWG .25" ID ~50nH
L4 -- 10t #18 AWG .25" ID ~470nH
L5 -- VK200-4B ferrite choke ~3uH
R1 -- 25 Ohm 1/2W Carbon
T1 -- 4:1 Broadband Transformer
L5
+
C6
L4
L2
C5
C7
-
150V
L3
RF Output
RF Input
T1
L1
DUT
C3
C4
C2
C1
R1
81.36 MHz Test Circuit
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
Top View
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Dimensions in Millimeters and (Inches)
NOTE:
The ARF446 and ARF447 comprise a symmetric
pair of RF power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
Source
3.55 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Device
ARF449A
ARF449B
Gate
Drain
Source
Source
Drain
Gate
7-2003
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
050-4909 Rev C
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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