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2N6786TXV

Description
Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
CategoryDiscrete semiconductor    The transistor   
File Size169KB,5 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

2N6786TXV Overview

Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

2N6786TXV Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
Other featuresRADIATION HARDENED
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)1.25 A
Maximum drain-source on-resistance3.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-205AF
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)235
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)5.5 A
Certification statusNot Qualified
GuidelineMILITARY STANDARD (USA)
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
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