SILICON PIN DIODES
Microwave applications
ATTENUATOR SILICON PIN DIODES
Description
The table below presents a single set of values from the variety of customer options available for this
series of passivated PIN diodes. TEMEX uses its proprietary technology, which enables the customer
to incorporate characteristics specific to the application involved, e.g. capacitance and I zone thickness.
Typical applications include variable RF attenuators and AGC (Automatic Gain Control) circuits, from
a few MHz to several GHz.
Electrical characteristics
CHIP DIODES
Charact.
at 25°C
Test
conditions
Type
CHIP AND PACKAGED DIODES
I
Z
ONE
T
HICKNESS
(1)
PACKAGED
DIODES
Reverse Minority carrier
current
lifetime
I
R
V
R
= 100 V
C
O
N
F
I
G
U
R
A
T
I
O
N
Series resistance
R
SF
F = 120 MHz
Junction
capacitance
C
J
(2)
F = 1 MHz
V
R
= 50 V
I
F
= 10 mA
Ω
pF
τ
I
I
F
= 10 mA
I
R
= 6 mA
µs
Type
Standard
package
(3)
µm
I
F
= 0.1 mA
Ω
I
F
= 1 mA
Ω
µA
EH40073
EH40141
EH40144
EH40225
C4c
C4a
C4c
C4d
typ.
70
140
140
220
min.
70
400
200
400
max
140
800
400
800
min.
8
50
25
50
max
16
100
50
100
min.
1.0
6.5
3.5
6.5
max
2.0
13.0
7.0
13.0
typ.
0.30
0.05
0.10
0.10
max
0.50
0.10
0.30
0.30
max
10
10
10
10
min.
1.5
1.5
4.0
5.5
typ.
2.0
2.5
5.0
7.0
DH40073
DH40141
DH40144
DH40225
F 27d
F 27d
F 27d
F 27d
(1)
(2)
(3)
Other I zone thicknesses available on request
Other capacitance values available on request
Custom cases available on request
Temperature ranges:
Operating junction (T
j
) : -55° C to +175° C
Storage
: -65° C to +200° C
Typical series resistance vs forward current
1000
R
SF
(Ω)
100
EH40141 - EH40225
EH40144
EH40073
10
1
0.1
1
10
100
I
F
(mA)
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.com
12-25
Vol. 1
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