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IRFF310PBF

Description
1.25A, 400V, 4.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size196KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

IRFF310PBF Overview

1.25A, 400V, 4.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

IRFF310PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)0.82 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)1.25 A
Maximum drain-source on-resistance4.15 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-205AF
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)5.5 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceNOT SPECIFIED
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD-90425D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Number BVDSS R
DS(on)
IRFF310
400V
3.6Ω
I
D
1.25A
®
IRFF310
JANTX2N6786
JANTXV2N6786
REF:MIL-PRF-19500/556
400V, N-CHANNEL
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
®
TO-39
Features:
n
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
1.25
0.80
5.5
15
0.12
±20
0.82
1.25
1.5
4.0
-55 to 150
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
Units
A
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