NDT3055L/D84Z datasheet, PDF - EEWORLD Datasheet

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Datasheet> All Categories > Discrete semiconductor> The transistor> NDT3055L/D84Z

NDT3055L/D84Z: Description3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261; CategoryDiscrete semiconductor The transistor; File Size162KB，6 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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NDT3055L/D84Z Overview

3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261

NDT3055L/D84Z Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	3.7 A
Maximum drain-source on-resistance	0.12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-261
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	1.1 W
Maximum pulsed drain current (IDM)	25 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	70 ns
Maximum opening time (tons)	40 ns
Base Number Matches	1

NDT3055L/D84Z Related Products

	NDT3055L/D84Z	NDT3055L/L99Z	NDT3055L/S62Z
Description	3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261	3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261	3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V
Maximum drain current (ID)	3.7 A	3.7 A	3.7 A
Maximum drain-source on-resistance	0.12 Ω	0.12 Ω	0.12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-261	TO-261	TO-261
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1
Number of terminals	4	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	1.1 W	1.1 W	1.1 W
Maximum pulsed drain current (IDM)	25 A	25 A	25 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maximum off time (toff)	70 ns	70 ns	70 ns
Maximum opening time (tons)	40 ns	40 ns	40 ns
Base Number Matches	1	1	1

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