RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
IHER1601C
THRU
IHER1606C
HIGH EFFICIENCY RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 16.0 Amperes
FEATURES
*
*
*
*
*
*
*
Low power loss, high efficiency
Low forward voltage drop
Low thermal resistance
High current capability
High speed switching
High surge capability
High reliability
.114(2.9)
.098(2.5)
.406(10.3)
.382(9.7)
.138(3.5)
.122(3.1)
ITO-220
.185(4.7)
.169(4.3)
.134(3.4)
.110(2.8)
MECHANICAL DATA
*
*
*
*
*
*
Case: ITO-220 molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 2.24 grams
Polarity: As marked
.602(15.3)
.579(14.7)
.154 (3.9)
.138 (3.5)
.531(13.5)
.492(12.5)
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.055(1.4)
.039(1.0)
.035(0.9)
.020(0.5)
.108(2.75)
.091(2.30)
.031(0.8)
.016 (0.4)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
C
= 75 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
θ
JC
C
J
T
J
, T
STG
IHER1601C IHER1602C IHER1603C IHER1604C IHER1605C IHER1606C
UNITS
Volts
Volts
Volts
Amps
Amps
0
50
35
50
100
70
100
200
140
200
16.0
200
2.5
40
300
210
300
400
280
400
600
420
600
C/ W
pF
0
-55 to + 150
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 8.0A DC
o
@T
C
= 25 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
3. Suffix “A” = Common Anode.
@T
C
= 100
o
C
SYMBOL
V
F
I
R
trr
50
IHER1601C IHER1602C IHER1603C IHER1604C IHER1605C IHER1606C
o
UNITS
Volts
uAmps
1.0
10
150
1.3
1.7
75
nSec
2002-11
RATING AND CHARACTERISTIC CURVES ( IHER1601C THRU IHER1606C )
AVERAGE FORWARD CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
20
16
12
8
4
0
Single Phase Half Wave
60Hz Inductive or
Resistive Load
FIG. 2 - TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT, (uA)
TC = 100
100
10
0
50
100
CASE TEMPERATURE, (
150
)
PEAK FORWARD SURGE CURRENT, (A)
FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
200
175
150
125
100
75
50
1
2
5
10
20
NUMBER OF CYCLES AT 60Hz
50
100
TC = 25
1.0
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
80
40
20
10
4
JUNCTION CAPACITANCE, (pF)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE, ( V )
TJ = 25
1
.4
TJ = 25
Pulse Width = 300us
1% Duty Cycle
.1
.5
.6
.7
.8
.9
1.0
1.1
1.2
1.3
INSTANTANEOUS FORWARD VOLTAGE, (V)
RECTRON
FPGA/CPLD
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