FDH3595T50A datasheet, PDF - EEWORLD Datasheet

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FDH3595T50A: DescriptionRectifier Diode, 1 Element, 0.2A, Silicon, DO-35; CategoryDiscrete semiconductor diode; File Size25KB，3 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FDH3595T50A Overview

Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35

FDH3595T50A Parametric

Parameter Name	Attribute value
Maker	Fairchild
package instruction	O-PALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-35
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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FDH3595

Discrete POWER & Signal

Technologies

FDH3595

DO-35

High Conductance Low Leakage Diode

Sourced from Process 1M. See MMBD1501-1505 for characteristics.

Absolute Maximum Ratings*

Symbol

f(surge)

Working Inverse Voltage

Average Rectified Current

DC Forward Current

Recurrent Peak Forward Current

TA = 25°C unless otherwise noted

Parameter

Value

125

200

500

600

1.0

4.0

-65 to +175

175

Units

°C

stg

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

Storage Temperature Range

Operating Junction Temperature

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

These ratings are based on a maximum junction temperature of 200 degrees C.

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

θJA

TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

Max

MMBD7000*

500

3.33

300

Units

mW/°C

°C/W

1997 Fairchild Semiconductor Corporation

FDH3595T50A Related Products

	FDH3595T50A	FDH3595T50R	FDH3595.TR	FDH3595T26A	FDH3595T26R
Description	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35
Maker	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95 code	DO-35	DO-35	DO-35	DO-35	DO-35
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum power dissipation	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Base Number Matches	1	1	1	1	-

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