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FDH3595T50R

Description
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35
CategoryDiscrete semiconductor    diode   
File Size25KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

FDH3595T50R Overview

Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35

FDH3595T50R Parametric

Parameter NameAttribute value
MakerFairchild
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
FDH3595
Discrete POWER & Signal
Technologies
FDH3595
DO-35
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501-1505 for characteristics.
Absolute Maximum Ratings*
Symbol
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
TA = 25°C unless otherwise noted
Parameter
Value
125
200
500
600
1.0
4.0
-65 to +175
175
Units
V
mA
mA
mA
A
A
°C
°C
T
stg
T
J
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
MMBD7000*
500
3.33
300
Units
mW
mW/°C
°C/W
ã
1997 Fairchild Semiconductor Corporation

FDH3595T50R Related Products

FDH3595T50R FDH3595T50A FDH3595.TR FDH3595T26A FDH3595T26R
Description Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35 Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35 Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35 Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35 Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35
Maker Fairchild Fairchild Fairchild Fairchild Fairchild
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-35 DO-35 DO-35 DO-35 DO-35
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum power dissipation 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Base Number Matches 1 1 1 1 -
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