PD - 94630
SMPS MOSFET
IRFPS38N60L
HEXFET
®
Power MOSFET
Applications
•
Zero Voltage Switching SMPS
V
DSS
R
DS(on)
typ.
Trr
typ.
I
D
•
Telecom and Server Power Supplies
•
Uninterruptible Power Supplies
120mΩ
600V
170ns 38A
•
Motor Control applications
Features and Benefits
•
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
•
Lower Gate charge results in simpler drive requirements.
•
Enhanced dv/dt capabilities offer improved ruggedness.
•
Higher Gate voltage threshold offers improved noise immunity
.
SUPER TO-247AC
Absolute Maximum Ratings
I
D
@ T
C
= 25°C
I
DM
Parameter
Continuous Drain Current, V
GS
@ 10V
Max.
38
24
150
540
4.3
±30
13
-55 to + 150
300 (1.6mm from case )
1.1(10)
N•m (lbf•in)
W
W/°C
V
V/ns
°C
Units
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
V
GS
dv/dt
T
J
T
STG
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
d
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
170
420
830
9.1
38
A
150
1.5
250
630
1240
14
nC
A
V
ns
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
p-n junction diode.
T
J
= 25°C, I
S
= 38A, V
GS
= 0V
T
J
= 25°C, I
F
= 38A
T
J
= 125°C, di/dt = 100A/µs
J
J
f
S
2600 3900
f
T = 25°C, I = 38A, V = 0V
f
T = 125°C, di/dt = 100A/µs
f
S
GS
T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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1
02/12/03
IRFPS38N60L
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
600
–––
–––
3.0
–––
–––
–––
–––
–––
–––
0.41
120
–––
–––
–––
–––
–––
1.2
–––
–––
150
5.0
50
2.0
100
-100
–––
Ω
V
mΩ
V
µA
mA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 23A
V/°C Reference to 25°C, I
D
= 1mA
f
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
f = 1MHz, open drain
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff.
C
oss
eff. (ER)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Min. Typ. Max. Units
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
44
130
92
69
7990
740
72
350
260
–––
320
85
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
S
I
D
= 38A
Conditions
V
DS
= 50V, I
D
= 23A
V
DS
= 480V
V
GS
= 10V, See Fig. 7 & 15
V
DD
= 300V
I
D
= 38A
R
G
= 4.3Ω
V
GS
= 10V, See Fig. 11a & 11b
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V,V
DS
= 0V to 480V
f
f
g
Avalanche Characteristics
Symbol
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Typ.
–––
–––
–––
Max.
680
38
54
Units
mJ
A
mJ
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.22
–––
40
Units
°C/W
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
J
= 25°C, L = 0.91mH, R
G
= 25Ω,
I
AS
= 38A, dv/dt = 13V/ns. (See Figure 12a)
I
SD
≤
38A, di/dt
≤
630A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C.
Pulse width
≤
300µs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff.(ER) is a fixed capacitance that stores the same energy
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
2
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IRFPS38N60L
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
1
10
4.5V
0.1
4.5V
0.01
1
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
0.1
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
RDS(on) , Drain-to-Source On Resistance
ID = 38A
2.5
ID, Drain-to-Source Current
(Α
)
VGS = 10V
100
T J = 150°C
10
2.0
(Normalized)
1.5
1
T J = 25°C
0.1
1.0
0.5
0.01
4
6
8
10
12
14
16
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRFPS38N60L
100000
VGS
Ciss
Crss
Coss
10000
= 0V,
f = 1 MHZ
=C +C , C
gs
gd
ds SHORTED
=C
gd
=C +C
ds gd
50
45
40
35
Energy (µJ)
Ciss
C, Capacitance(pF)
30
25
20
15
1000
Coss
100
Crss
10
5
10
1
10
100
1000
0
0
100
200
300
400
500
600
700
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typ. Output Capacitance
Stored Energy vs. V
DS
12.0
ID= 38A
VGS , Gate-to-Source Voltage (V)
1000.00
VDS= 480V
VDS= 300V
VDS= 120V
8.0
ISD, Reverse Drain Current (A)
10.0
100.00
T J = 150°C
10.00
6.0
4.0
1.00
T J = 25°C
2.0
VGS = 0V
0.0
0
50
100
150
200
250
Q G Total Gate Charge (nC)
0.10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8.
Typical Source-Drain Diode
Forward Voltage
4
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IRFPS38N60L
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
40
35
30
ID, Drain Current (A)
100
25
20
15
10
5
0
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
10msec
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 9.
Maximum Safe Operating Area
Fig 10.
Maximum Drain Current vs.
Case Temperature
V
DS
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
V
DS
90%
D.U.T.
+
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 11a.
Switching Time Test Circuit
Fig 11b.
Switching Time Waveforms
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