IRFR9014TRL datasheet, PDF - EEWORLD Datasheet

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IRFR9014TRL: Description5.3 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size178KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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5.3 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET

IRFR9014TRL Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	140 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	5.1 A
Maximum drain-source on-resistance	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	25 W
Maximum pulsed drain current (IDM)	20 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IRFR9014TRL Related Products

	IRFR9014TRL	IRFR9014	IRFU9014
Description	5.3 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET	5.3 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET	5.3 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET
Is it Rohs certified?	incompatible	incompatible	incompatible
Reach Compliance Code	compli	unknow	compli
ECCN code	EAR99	EAR99	EAR99
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	60 V	60 V	60 V
Maximum drain current (ID)	5.1 A	5.1 A	5.1 A
Maximum drain-source on-resistance	0.5 Ω	0.5 Ω	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA	TO-251AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e0	e0	e0
Humidity sensitivity level	1	1	1
Number of components	1	1	1
Number of terminals	2	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power consumption environment	25 W	25 W	25 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO
Terminal surface	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maker	International Rectifier （ Infineon ）	-	International Rectifier （ Infineon ）
package instruction	SMALL OUTLINE, R-PSSO-G2	-	IN-LINE, R-PSIP-T3
Is Samacsys	N	N	-
Avalanche Energy Efficiency Rating (Eas)	140 mJ	-	140 mJ
Maximum pulsed drain current (IDM)	20 A	-	20 A
Base Number Matches	1	1	-
Maximum drain current (Abs) (ID)	-	5.1 A	5.1 A
Maximum power dissipation(Abs)	-	25 W	25 W

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