PHOTONIC
DETECTORS INC.
Detector Amplifier Hybrid, Blue Enhanced
Type PDB-716-100
WINDOW CAP (WELDED)
ACTIVE AREA SURFACE
.090 [2.29] ±.005 [0.13]
PIN 5. CASE SHIELD
.500 [12.70]
PIN 4. V+
PIN 3. V-
Ø.20 [0.50]
5 PLACES
Ø.200 [5.08]
PIN CIRCLE
PIN 1.
CIRCUIT
GROUND
PACKAGE DIMENSIONS INCH [mm]
.085 [2.15]
.075 [1.90]
82°
VIEWING
ANGLE
Ø.330 [8.38]
Ø.320 [8.13]
.035 [0.89]
.030 [0.76]
FLANGE
.175 [4.44]
.165 [4.19]
0.110 [2.79] SQ
Ø0.100 [Ø2.54]
ACTIVE AREA
Ø.365 [Ø9.27]
Ø.355 [Ø9.02]
PIN 2. OUTPUT
TO-5 HERMETIC CAN PACKAGE
WARNING: ESD SENSITIVE DEVICE
APPLICATIONS
Medical diagnostic
Low signal
applications
Color analysis
Analytical chemistry
SPECTRAL RESPONSE
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1000
1100
Hz
1200
190
300
400
500
600
700
800
900
0
ACTIVE AREA = 5.07 mm
2
FEATURES
10 Khz bandwidth
Internal100 MOhm gain
Low offset voltage
Low input bias current
DESCRIPTION:
The
PDB-716-100
is a low
noise, medium speed, blue enhanced silicon
photodiode integrated with a low noise JFET
monolithic transimpedance op-amp. There is
an internal 100 MOhm feedback gain re-
sistor which limits the bandwidth to 10KHz.
RESPONSIVITY (A/W)
ABSOLUTE MAXIMUM RATING
(TA=25
O
C unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
V
BR
T
STG
T
O
T
S
I
L
Reverse Voltage
Storage Temperature
Operating Temperature Range
Soldering Temperature*
Light Current
-55
0
15
+125
+70
+240
500
V
O
O
O
C
C
C
10
E=
Q
0%
mA
*1/16 inch from case for 3 secs max
WAVELENGTH (nm)
PHOTODIODE ELECTRO-OPTICAL CHARACTERISTICS
(TA=25
O
C unless otherwise noted)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
SC
I
D
R
SH
TC R
SH
C
J
Short Circuit Current
Dark Current
Shunt Resistance
RSH Temp. Coefficient
Junction Capacitance
H = 100 fc, 2850 K
H = 0, V
R
= 10 V
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 V**
350
950
100
125
2.5x10
-14
15
Spot Scan
I = 10
m
A
VR = 10 V @ Peak
RL = 1 KΩ V
R
= 10 V
.5
45
65
1.0
2
-8
15
1100
5.0
m
A
nA
G
Ω
% /
o
C
pF
nm
nm
V
W/
nS
λ
range
λ
p
V
BR
NEP
tr
Spectral Application Range Spot Scan
Spectral Response - Peak
Breakdown Voltage
Noise Equivalent Power
Response Time
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. ** f = 1 MHz
PAGE 1 OF 2
[FORM NO. 100-PDB-716-100 REV A]
PHOTONIC
DETECTORS INC.
AMPLIFIER SPECIFICATION
TA = 25° C and VS =
±
15 vdc
Detector Amplifier Hybrid
Type PDB-716-100
UNLESS OTHERWISE NOTED
CHARACTERISTIC
FEEDBACK NETWORK 100
MEG
Ω
RESISTER, 1pF*
CAPACITOR
TEST CONDITIONS
THIN FILM RESISTOR
TRIMMED TO
±5%
*TOL
±5%
INITIAL OFFSET
FULL RANGE
LONG TERM OFFSET STABILITY
MIN
TYP
100
0.6
.04
4
1 X 10
-12
1 X 10
-12
MAX
UNITS
MEG
Ω
3.9
mV
µ
V/MONTH
V
IO
INPUT OFFSET VOLTAGE
I
IB
INPUT BIAS CURRENT
OFFSET CURRENT, VCM=0
DIFFERENTIAL
pA
Ω
R
i
INPUT RESISTANCE
COMMONMODE
COMMONMODE
V
ICR
INPUT VOLTAGE RANGE
COMMONMODE
REJECTION VCM
±10
V
VOLTAGE 0, f=1 KHz
V
N(PP)
INPUT VOLTAGE NOISE
VOLTAGE 0, f=10 KHz
f=1 KHz
UNITY GAIN, SMALL SIGNAL
R
L
= 10 KW C
L
= 100 pF
W
SLEW RATE, UNITY GAIN
A
VD
OPEN LOOP GAIN
V
OM±
OUTPUT CHARACTERISTICS
vo=
±10
V, R
L
=10 KΩ
VOLTAGE @ R
L
=10 K
Ω
VOLTAGE @ R
L
= 600
Ω
OPERATING RANGE
−12
72
+16
90
2
40
1
2
V
µV
PP
nV/√Hz
fA /
√Hz
MHz
V/µs
V/mV
V
V
±18
V
I
N
INPUT CURRENT NOISE
B
OM
FREQUENCY RESPONSE
2.6
20
±13.2
±12.5
±3.5
3.4
230
±13.7
±13
±15
V
CC±
POWER SUPPLY
AMPLIFIER ABSOLUTE MAXIMUM RATING (TA=25°C UNLESS OTHERWISE NOTED)
PARAMETER
SUPPLY VOLTAGE
INTERNAL POWER DISSIPATION
STORAGETEMPERATURE
OPERATINGTEMPERATURE
MIN
±4.5
MAX
±18
500
UNITS
V
mW
°
C
°
C
-55
0
+150
+70
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
[FORM NO. 100-PDB-716-100 REV A]
are subject to change without notice.
PAGE 2 OF 2
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