PHOTONIC
DETECTORS INC.
Silicon Photodiode, Blue Enhanced Ring Detector
Type PDB-C210
PACKAGE DIMENSIONS INCH (mm)
Ø0.795
Ø[20.19]
Ø0.720
Ø[18.29]
Ø0.608
Ø[15.44]
WINDOW CAP
(WELDED)
0.225 [5.72]
0.159 [4.04]
Ø0.500 [12.70]
PIN CIRCLE
OUTER AA
ANODE
0.375 [9.53]
Ø0.030[0.76]
TYP
1
2
3
HEADER
0.030 [0.76]
0.189 [4.80]
ANODE
CENTER AA
CATHODE
CASE GROUND
Ø0.3937 [10.00]
Ø0.1969 [5.00]
OUTER
ACTIVE AREA
Ø0.1575 [4.00]
CENTER
ACTIVE AREA
PHOTODIODE CHIP
TO-8 .795 INCH [20.19] DIA HERMETIC PACKAGE
ACTIVE AREA= OUTER 58.91 mm
2
, CENTER 12.57 mm
2
FEATURES
Blue enhanced
Photovoltaic type
Photoconductive type
High quantum efficiency
DESCRIPTION:
The
PDB-C210
is a two element "Ring
Detector". The center and outer active areas are seperated by a
.0394 inch (1.0 mm) gap. Designed for either photovoltaic low
noise or photoconductive high speed applications. It is packaged
in a hermetic jumbo TO-8 metal can with a flat glass window.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
190
300
APPLICATIONS
Medical Sensor
Position sensor
Industrial controls
Instrumentation
ABSOLUTE MAXIMUM RATING
(TA=25
O
C unless otherwise noted)
SYMBOL
V
BR
T
STG
T
O
T
S
I
L
SPECTRAL RESPONSE
RESPONSIVITY (A/W)
10
E=
Q
0%
PARAMETER
Reverse Voltage
Storage Temperature
CENTER
MIN
MAX
OUTER
MIN
MAX
UNITS
V
O
O
O
75
25
-40 +125 -40 +125
C
C
Operating Temperature Range -40 +100 -40 +100
Soldering Temperature
Light Current
+224
500
+224
500
400
500
600
700
800
900
1000
1100
mA
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS
(TA=25
O
C unless otherwise noted)
SYMBOL CHARACTERISTIC
I
SC
I
D
R
SH
TC R
SH
C
J
Short Circuit Current
Dark Current
Shunt Resistance
R
SH
Temp. Coefficient
Junction Capacitance
TEST CONDITIONS
H = 100 fc, 2850 K
H = 0, V
R
= 10 V
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 V**
CENTER
240
25
200
500
-8
175
350
940
1100
350
25
900
OUTER
MIN TYP MAX MIN TYP MAX
100
50
-8
800
1100
940
UNITS
m
A
nA
M
Ω
% /
o
C
pF
nm
nm
V
W/
nS
Hz
λ
range
λ
p
V
BR
NEP
tr
Spectral Application Range Spot Scan
Spectral Response - Peak Spot Scan
Breakdown Voltage
Noise Equivalent Power
Response Time
I = 10
m
A
V
R
= 10 V @ Peak
RL = 1 K
Ω
V
R
= 50 V
50
2.5x10
-13
TYP
20
50
6.0x10
-13
TYP
35
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. **f=1 MHz
[FORM NO. 100-PDB-C210 REV A]
1200
C
0
Embedded System
京公网安备 11010802033920号
EEWORLD
