PHOTONIC
X-RAY, Silicon Photodiode Array, Photovoltaic
DETECTORS INC.
(with CsI(Ti) scintillation crystals)Type
PDB-V216-C
PACKAGE DIMENSIONS INCH [mm]
C
L
C
L
.062 [1.57]
.100 [2.54]
ACTIVE AREA
.145 [3.69]
.072 [1.84]
ACTIVE AREA
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
1
3
±.005 [.13]
.992 [25.20]
.800 [20.32]
16X ANODE
5 7 9 11 13 15 17
.062 [1.57]
COMMON
CATHODE
C
L
.300
[7.62]
C
L
2 4 6 8 10 12 14 16 18
COMMON CATHODE
.100 [2.54]
ACTIVE AREA
C C
TYP
L L
ANODE 16 PLACES
.425
[10.80]
CsI(Ti)
CRYSTAL
ARRAY
2X Ø.018 ROUND
PIN HEADER
STRIP
.373 [9.47]
.010 [0.25] GAP
.048 [1.22]
ACTIVE AREA
.229 [5.82]
.399 [10.13]
ELEMENT NO.
1
2
3
4
5
6
7
8
9
PIN CONNECTIONS
PIN NO.
ELEMENT NO.
1
10
4
11
3
12
6
13
5
14
8
15
7
16
10
CATHODE
9
CATHODE
PIN NO.
12
11
14
13
16
15
18
2
17
X-RAY SCINTILLATOR IS A CESIUM IODIDE, THALLIUM
DOPED, CsI(Ti) CRYSTAL. THE EMISSION IS 565 nm AND
HAS 99% ABSORPTION OF X-RAY ENERGY.
16 ELEMENT X-RAY PACKAGE
ACTIVE AREA = 2.31mm
2
FEATURES
.062 inch centers
Stackable
CsI(Ti) crystals
Low capacitance
DESCRIPTION
The
PDB-V216-C
is a common cathode,
monolithic silicon PIN photodiode 16
element array. Designed to be stacked end
to end to form a line of pixels. Supplied with
X-Ray CsI(Ti) scintillation crystals.
RESPONSIVITY (A/W)
APPLICATIONS
Luggage X-ray
X-Ray scanner
X-Ray inspection
ABSOLUTE MAXIMUM RATING
(TA=25
O
C unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
V
BR
T
STG
T
O
T
S
I
L
Reverse Voltage
Storage Temperature
Operating Temperature Range
Soldering Temperature*
Light Current
-40
-20
50
+100
+75
+265
500
V
O
O
O
SPECTRAL RESPONSE
0.7
0.6
0.5
0.4
0.3
0.2
0.1
190
300
400
500
600
700
800
900
1000
1100
Hz
1200
0
C
C
C
%
00
=1
QE
mA
*1/16 inch from case for 3 secs max
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS
(TA=25
O
C unless otherwise noted, without scintillator)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
SC
I
D
R
SH
TC R
SH
C
J
Short Circuit Current
Dark Current
Shunt Resistance
RSH Temp. Coefficient
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Noise Equivalent Power
Response Time
H = 100 fc, 2850 K
H = 0, V
R
= 1 V
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 mV
H = 0, V
R
= 0 V**
Spot Scan
Spot Scan
I = 10
m
A
V
R
= 10 V @ Peak
RL = 50
Ω
V
R
= 10 V
15
350
950
30
2x10
-14
50
200
18
28
1.0
400
-8
300
400
1100
5.0
m
A
nA
M
Ω
% /
o
C
pF
nm
nm
V
W/
nS
λ
range
λ
p
V
BR
NEP
tr
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. ** f = 1 MHz
[FORM NO. 100-PDB-V216-C REV D]
DSP and ARM Processors
京公网安备 11010802033920号
EEWORLD
