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BPV21F

Description
photodiode pin side view
CategoryLED optoelectronic/LED    photoelectric   
File Size91KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BPV21F Overview

photodiode pin side view

BPV21F Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknown
Maximum dark power30 nA
Installation featuresTHROUGH HOLE MOUNT
Maximum response time1e-7 s
Semiconductor materialSilicon
surface mountNO
BPV21F(L)
Vishay Semiconductors
Silicon PIN Photodiode
Description
BPV21F(L) is a high speed and high sensitive PIN
photodiode in a plasic package with a cylindrical side
view lens. The epoxy package itself is an IR filter,
spectrally matched to GaAs or GaAs/GaAlAs IR emit-
ters (λ
p
= 950 nm).
Lens radius and chip position are perfectly matched
to the chip size, giving high sensitivity without com-
promising the viewing angle.
In comparison with flat packages the cylindrical lens
package achieves a sensitivity improvement of 20 %.
948387
Features
Wide viewing angle
ϕ
= ± 65°
Fast response times
e4
Low junction capacitance
TO-92 plastic package with IR filter
Filter designed for 950 nm transmission
Option "L" long lead package optional available
with suffix "L"; e.g.: BPV23FL
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Large radiant sensitive area (A = 5.7 mm
2
)
Applications
Infrared remote control and free air transmission sys-
tems in combination with IR emitter diodes (TSU...- or
TSI...-Series).
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
t
5s
T
amb
25 °C
Test condition
Symbol
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
60
215
100
- 55 to + 100
- 55 to + 100
260
350
Unit
V
mW
°C
°C
°C
°C
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode capacitance
Serial Resistance
Test condition
I
F
= 50 mA
I
R
= 100
μA,
E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 12 V, f = 1 MHz
Symbol
V
F
V
(BR)
I
ro
C
D
R
S
60
2
48
900
30
Min
Typ.
1
Max
1.3
Unit
V
V
nA
pF
Ω
Document Number 81507
Rev. 1.6, 13-Nov-06
www.vishay.com
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