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BA591 T/R

Description
Light emitting diodes (general purpose, power supply, conversion) tape-7 dio-rfss
Categorysemiconductor    Discrete semiconductor   
File Size135KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BA591 T/R Overview

Light emitting diodes (general purpose, power supply, conversion) tape-7 dio-rfss

DISCRETE SEMICONDUCTORS
DATA SHEET
BA591
Band-switching diode
Product specification
Supersedes data of 1998 Aug 31
2004 Feb 17

BA591 T/R Related Products

BA591 T/R BA591 BA591,115
Description Light emitting diodes (general purpose, power supply, conversion) tape-7 dio-rfss Diodes - General Purpose, Power, Switching Band-switching diode
Is it Rohs certified? - conform to conform to
Maker - NXP NXP
Parts packaging code - SC-76 SOD
package instruction - R-PDSO-G2 R-PDSO-G2
Contacts - 2 2
Reach Compliance Code - compliant compliant
Configuration - SINGLE SINGLE
Maximum diode capacitance - 1.05 pF 1.05 pF
Nominal diode capacitance - 0.8 pF 0.8 pF
Diode component materials - SILICON SILICON
Diode type - MIXER DIODE MIXER DIODE
frequency band - VERY HIGH FREQUENCY VERY HIGH FREQUENCY
JESD-30 code - R-PDSO-G2 R-PDSO-G2
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Number of components - 1 1
Number of terminals - 2 2
Maximum operating temperature - 150 °C 150 °C
Minimum operating temperature - -65 °C -65 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Maximum power dissipation - 0.5 W 0.5 W
Certification status - Not Qualified Not Qualified
Maximum repetitive peak reverse voltage - 35 V 35 V
surface mount - YES YES
Terminal surface - Tin (Sn) Tin (Sn)
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - 30 40
Base Number Matches - 1 1
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