LN1VB60-4000 datasheet, PDF - EEWORLD Datasheet

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LN1VB60-4000: DescriptionBridge rectifier vrm=600 ifsm=50; CategoryDiscrete semiconductor diode; File Size266KB，2 Pages; ManufacturerSHINDENGEN; Websitehttps://www.shindengen.com

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LN1VB60-4000 Overview

Bridge rectifier vrm=600 ifsm=50

LN1VB60-4000 Parametric

Parameter Name	Attribute value
Maker	SHINDENGEN
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSIP-T4
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	1.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

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Bridge Diode

½ノイズタイプシングルインライン型

Low Noise type Single In-line Package

LN1VB60

600V 1.2A

特長

• ½ノイズ

• 小型 S

I

P パッケージ

■外観図 OUTLINE

Package：1V

Unit : mm

Weight : 1.1g typ.）

（

品名

Type No.

15.6

級表示

（例）

Class

ロッ

ト記号

（例）

Date code

3.4

Feature

• Low Noise

• Small-S

I

P

＋

①

∼ ∼

② ③

−

④

LN1VB60

3D

7.1

12.2

①

②

③

④

外½図については新電元 Web サイト又は〈半導½½品一覧表〉をご参照下

さい。捺印表示については捺印仕様をご確認下さい。

■定格表 RATINGS

●絶対最大定格

Absolute Maximum Ratings（

指定のない場合

Tl =25℃／

unless otherwise speci

項目

Item

保存温度

Storage Temperature

接合部温度

Operation Junction Temperature

せん頭逆電圧

Maximum Reverse Voltage

出力電流

Average Rectified Forward Current

せん頭サージ順電流

Peak Surge Forward Current

電流二乗時間積

Current Squared Time

）

単½

Unit

℃

V

A

2

s

記号

条件

Symbol Conditions

T

stg

T

j

V

RM

I

O

I

FSM

I

2

t

50Hz 正弦波，抵抗負荷，Ta = 25℃

50Hz sine wave, Resistance load, Ta = 25℃

50Hz 正弦波，非繰り返し１サイクルせん頭値， Tj = 25℃

50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25℃

1ms≦t＜10ms，Tj=25℃，１素子½たりの規格値

per diode

品名

Type No.

LN1VB60

−40∼150

150

600

1.2

50

6

●電気的・熱的特性 Electrical

Characteristics（

指定のない場合

Tl =25℃／

unless otherwise speci

順電圧

Forward Voltage

逆電流

Reverse Current

逆回復時間

Reverse Recovery Time

熱抵抗

Thermal Resistance

）

V

μA

μs

℃/W

V

F

I

R

trr

θjl

θja

I

F =

0.6A,

V

R =

V

RM,

パルス測定，１素子½たりの規格値

Pulse measurement, per diode

MAX

1.0

10

5

16

62

パルス測定，１素子½たりの規格値

Pulse measurement, per diode

１素子½たりの規格値

I

F =

0.1A, I

R

= 0.1A,

per diode

接合部・リード間

Junction to Lead

接合部・周囲間

Junction to Ambient

34

（J534）

LN1VB60-4000 Related Products

	LN1VB60-4000	LN1VB60-4101
Description	Bridge rectifier vrm=600 ifsm=50	Bridge rectifier vrm=600 ifsm=50
Maker	SHINDENGEN	SHINDENGEN
Reach Compliance Code	unknown	unknown
Other features	LOW NOISE	LOW NOISE
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSIP-T4	R-PSIP-T4
Maximum non-repetitive peak forward current	50 A	50 A
Number of components	4	4
Phase	1	1
Number of terminals	4	4
Maximum operating temperature	150 °C	150 °C
Maximum output current	1.2 A	1.2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE

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