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LN1VB60-4101

Description
Bridge rectifier vrm=600 ifsm=50
CategoryDiscrete semiconductor    diode   
File Size266KB,2 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Download Datasheet Parametric Compare View All

LN1VB60-4101 Overview

Bridge rectifier vrm=600 ifsm=50

LN1VB60-4101 Parametric

Parameter NameAttribute value
MakerSHINDENGEN
Reach Compliance Codeunknown
Other featuresLOW NOISE
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSIP-T4
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current1.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Bridge Diode
½ノイズタイプ シングルインライン型
Low Noise type Single In-line Package
LN1VB60
600V 1.2A
特長
• ½ノイズ
• 小型 S
I
P パッケージ
■外観図 OUTLINE
Package:1V
Unit : mm
Weight : 1.1g typ.)
品名
Type No.
15.6
級表示
(例)
Class
ロッ
ト記号
(例)
Date code
3.4
Feature
• Low Noise
• Small-S
I
P
∼ ∼
② ③
LN1VB60
3D
7.1
12.2
外½図については新電元 Web サイト又は〈半導½½品一覧表〉をご参照下
さい。捺印表示については捺印仕様をご確認下さい。
■定格表 RATINGS
●絶対最大定格
Absolute Maximum Ratings(
指定のない場合
Tl =25℃/
unless otherwise speci
項  目
Item
保存温度
Storage Temperature
接合部温度
Operation Junction Temperature
せん頭逆電圧
Maximum Reverse Voltage
出力電流
Average Rectified Forward Current
せん頭サージ順電流
Peak Surge Forward Current
電流二乗時間積
Current Squared Time
単½
Unit
V
A
A
A
2
s
記号
条 件
Symbol Conditions
T
stg
T
j
V
RM
I
O
I
FSM
I
2
t
50Hz 正弦波,抵抗負荷,Ta = 25℃
50Hz sine wave, Resistance load, Ta = 25℃
50Hz 正弦波,非繰り返し1サイクルせん頭値, Tj = 25℃
50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25℃
1ms≦t<10ms,Tj=25℃, 1素子½たりの規格値
per diode
品 名
Type No.
LN1VB60
−40∼150
150
600
1.2
50
6
●電気的・熱的特性 Electrical
Characteristics(
指定のない場合
Tl =25℃/
unless otherwise speci
順電圧
Forward Voltage
逆電流
Reverse Current
逆回復時間
Reverse Recovery Time
熱抵抗
Thermal Resistance
V
μA
μs
℃/W
V
F
I
R
trr
θjl
θja
I
F =
0.6A,
V
R =
V
RM,
パルス測定,1素子½たりの規格値
Pulse measurement, per diode
MAX
MAX
MAX
MAX
MAX
1.0
10
5
16
62
パルス測定,1素子½たりの規格値
Pulse measurement, per diode
1素子½たりの規格値
I
F =
0.1A, I
R
= 0.1A,
per diode
接合部・リード間
Junction to Lead
接合部・周囲間
Junction to Ambient
34
(J534)

LN1VB60-4101 Related Products

LN1VB60-4101 LN1VB60-4000
Description Bridge rectifier vrm=600 ifsm=50 Bridge rectifier vrm=600 ifsm=50
Maker SHINDENGEN SHINDENGEN
Reach Compliance Code unknown unknown
Other features LOW NOISE LOW NOISE
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PSIP-T4 R-PSIP-T4
Maximum non-repetitive peak forward current 50 A 50 A
Number of components 4 4
Phase 1 1
Number of terminals 4 4
Maximum operating temperature 150 °C 150 °C
Maximum output current 1.2 A 1.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
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