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DTD122JCT216

Description
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size123KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

DTD122JCT216 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

DTD122JCT216 Parametric

Parameter NameAttribute value
MakerROHM Semiconductor
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 21.3
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)47
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.3 V
Base Number Matches1
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