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2102

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 11pF C(T), 22V, Silicon, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size105KB,2 Pages
ManufacturerMsi Electronics Inc
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2102 Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 11pF C(T), 22V, Silicon, Hyperabrupt

2102 Parametric

Parameter NameAttribute value
Objectid1404843645
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Minimum breakdown voltage22 V
Shell connectionISOLATED
ConfigurationSINGLE
Minimum diode capacitance ratio4.7
Nominal diode capacitance11 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor200
Maximum repetitive peak reverse voltage22 V
Maximum reverse current1e-7 µA
Reverse test voltage20 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationHYPERABRUPT
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