2N6989JS datasheet, PDF - EEWORLD Datasheet

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2N6989JS: DescriptionPower Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14; CategoryDiscrete semiconductor The transistor; File Size421KB，2 Pages; ManufacturerSemicoa; Websitehttp://www.snscorp.com/Semicoa.htm

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2N6989JS Overview

Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14

2N6989JS Parametric

Parameter Name	Attribute value
Parts packaging code	DIP
package instruction	HERMETIC SEALED, CERAMIC, DIP-14
Contacts	14
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	50 V
Minimum DC current gain (hFE)	30
JESD-30 code	R-CDIP-T14
Number of components	4
Number of terminals	14
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Guideline	MIL-19500
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2N6989

Silicon NPN Transistor

Data Sheet

Description

Complement to the 2N6987

Semicoa Semiconductors offers:

•

Screening and processing per MIL-PRF-19500

Appendix E

•

JAN level (2N6987J)

•

JANTX level (2N6987JX)

•

JANTXV level (2N6987JV)

•

JANS level (2N6987JS)

•

QCI to the applicable level

•

100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

•

Radiation testing (total dose) upon request

Applications

•

General purpose switching

•

4 Transistor Array

•

NPN silicon transistor

Features

•

Hermetically sealed Cerdip ceramic

Also available in chip configuration

Chip geometry 0400

Reference document:

MIL-PRF-19500/559

Benefits

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

•

Qualification Levels: JAN, JANTX,

JANTXV and JANS

•

Radiation testing available

Absolute Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Power Dissipation, T

A

= 25

O

C

Derate linearly above 25

O

C

Operating Junction Temperature

Storage Temperature

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

T

J

T

STG

T

C

= 25°C unless otherwise specified

Rating

50

75

6

800

2

11.43

-65 to +200

Unit

Volts

mA

W

mW/°C

°C

Copyright 2

010

Rev. D

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Semicoa

Corporation

Page 1 of 2

www.SEMICOA.com

2N6989JS Related Products

	2N6989JS	2N6989J	2N6989JX	2N6989JV	2N6989	JANTXVR2N6989
Description	Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14	Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14	Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14	Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14	Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14	Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14
package instruction	HERMETIC SEALED, CERAMIC, DIP-14	HERMETIC SEALED, CERAMIC, DIP-14	HERMETIC SEALED, CERAMIC, DIP-14	HERMETIC SEALED, CERAMIC, DIP-14	IN-LINE, R-CDIP-T14	IN-LINE, R-GDIP-T14
Reach Compliance Code	unknown	unknown	unknown	unknown	compliant	unknow
Maximum collector current (IC)	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Minimum DC current gain (hFE)	30	30	30	30	30	30
JESD-30 code	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-GDIP-T14
Number of components	4	4	4	4	4	4
Number of terminals	14	14	14	14	14	14
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Parts packaging code	DIP	DIP	DIP	DIP	DIP	-
Contacts	14	14	14	14	14	-
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	-
Guideline	MIL-19500	MIL-19500	MIL-19500	MIL-19500	-	MIL-19500; RH - 100K Rad(Si)
Base Number Matches	1	1	1	1	1	-

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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