JANTXVR2N6989 datasheet, PDF - EEWORLD Datasheet

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JANTXVR2N6989: DescriptionPower Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14; CategoryDiscrete semiconductor The transistor; File Size421KB，2 Pages; ManufacturerSemicoa; Websitehttp://www.snscorp.com/Semicoa.htm

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JANTXVR2N6989 Overview

Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14

JANTXVR2N6989 Parametric

Parameter Name	Attribute value
Maker	Semicoa
package instruction	IN-LINE, R-GDIP-T14
Reach Compliance Code	unknow
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 4 ELEMENTS
Minimum DC current gain (hFE)	30
JESD-30 code	R-GDIP-T14
Number of components	4
Number of terminals	14
Maximum operating temperature	200 °C
Package body material	CERAMIC, GLASS-SEALED
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Guideline	MIL-19500; RH - 100K Rad(Si)
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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2N6989

Silicon NPN Transistor

Data Sheet

Description

Complement to the 2N6987

Semicoa Semiconductors offers:

•

Screening and processing per MIL-PRF-19500

Appendix E

•

JAN level (2N6987J)

•

JANTX level (2N6987JX)

•

JANTXV level (2N6987JV)

•

JANS level (2N6987JS)

•

QCI to the applicable level

•

100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

•

Radiation testing (total dose) upon request

Applications

•

General purpose switching

•

4 Transistor Array

•

NPN silicon transistor

Features

•

Hermetically sealed Cerdip ceramic

Also available in chip configuration

Chip geometry 0400

Reference document:

MIL-PRF-19500/559

Benefits

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

•

Qualification Levels: JAN, JANTX,

JANTXV and JANS

•

Radiation testing available

Absolute Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Power Dissipation, T

A

= 25

O

C

Derate linearly above 25

O

C

Operating Junction Temperature

Storage Temperature

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

T

J

T

STG

T

C

= 25°C unless otherwise specified

Rating

50

75

6

800

2

11.43

-65 to +200

Unit

Volts

mA

W

mW/°C

°C

Copyright 2

010

Rev. D

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Semicoa

Corporation

Page 1 of 2

www.SEMICOA.com

JANTXVR2N6989 Related Products

	JANTXVR2N6989	2N6989JS	2N6989J	2N6989JX	2N6989JV	2N6989
Description	Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14	Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14	Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14	Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14	Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14	Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14
package instruction	IN-LINE, R-GDIP-T14	HERMETIC SEALED, CERAMIC, DIP-14	HERMETIC SEALED, CERAMIC, DIP-14	HERMETIC SEALED, CERAMIC, DIP-14	HERMETIC SEALED, CERAMIC, DIP-14	IN-LINE, R-CDIP-T14
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	compliant
Maximum collector current (IC)	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Minimum DC current gain (hFE)	30	30	30	30	30	30
JESD-30 code	R-GDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14
Number of components	4	4	4	4	4	4
Number of terminals	14	14	14	14	14	14
Package body material	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Guideline	MIL-19500; RH - 100K Rad(Si)	MIL-19500	MIL-19500	MIL-19500	MIL-19500	-
Parts packaging code	-	DIP	DIP	DIP	DIP	DIP
Contacts	-	14	14	14	14	14
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99
Base Number Matches	-	1	1	1	1	1

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