CXK5T8512TN datasheet, PDF - EEWORLD Datasheet

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CXK5T8512TN: Description65536-word X 8-bit High Speed CMOS Static RAM; File Size136KB，10 Pages; ManufacturerSONY; Websitehttp://www.sony.co.jp

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CXK5T8512TN Overview

65536-word X 8-bit High Speed CMOS Static RAM

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CXK5T8512TM/TN

-10LLX/12LLX

65536-word

8-bit High Speed CMOS Static RAM

Description

The CXK5T8512TM/TN is a high speed CMOS

static RAM organized as 65536-words by 8-bits.

Special feature are low power consumption and

high speed.

The CXK5T8512TM/TN is a suitable RAM for

portable equipment with battery back up.

Features

•

Extended operating temperature range:

–25 to +85°C

•

Wide supply voltage range operation: 2.7 to 3.6V

•

Fast access time:

(Access time)

3.0V operation

CXK5T8512TM/TN-10LLX 100ns (Max.)

CXK5T8512TM/TN-12LLX 120ns (Max.)

3.3V operation

CXK5T8512TM/TN-10LLX 85ns (Max.)

CXK5T8512TM/TN-12LLX 100ns (Max.)

Low standby current:

14µA (Max.)

Low data retention current: 12µA (Max.)

Low power data retention: 2.0V (Min.)

Package line-up

CXK5T8512TM

8mm

20mm 32 pin TSOP package

CXK5T8512TN

8mm

13.4mm 32 pin TSOP package

Preliminary

CXK5T8512TN

32 pin TSOP (Plastic)

CXK5T8512TM

32 pin TSOP (Plastic)

Block Diagram

A15

A13

A11

A14

A12

Buffer

Row

Decoder

Memory

Matrix

1024

512

GND

•

A10

Buffer

I/O Gate

Column

Decoder

Buffer

CE1

CE2

I/O Buffer

I/O1

I/O8

Function

65536-word

8-bit static RAM

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

–1–

PE96727-PS

CXK5T8512TN Related Products

	CXK5T8512TN	CXK5T8512TM	CXK5T8512TM-12LLX	CXK5T8512TN-10LLX	CXK5T8512TM-10LLX	CXK5T8512TN-12LLX
Description	65536-word X 8-bit High Speed CMOS Static RAM	65536-word X 8-bit High Speed CMOS Static RAM	65536-word X 8-bit High Speed CMOS Static RAM	65536-word X 8-bit High Speed CMOS Static RAM	65536-word X 8-bit High Speed CMOS Static RAM	65536-word X 8-bit High Speed CMOS Static RAM
Is it Rohs certified?	-	-	incompatible	incompatible	incompatible	incompatible
Maker	-	-	SONY	SONY	SONY	SONY
Parts packaging code	-	-	TSOP	TSOP	TSOP	TSOP
package instruction	-	-	TSOP1, TSSOP32,.8,20	TSOP1, TSSOP32,.56,20	TSOP1, TSSOP32,.8,20	TSOP1, TSSOP32,.56,20
Contacts	-	-	32	32	32	32
Reach Compliance Code	-	-	unknow	unknow	unknow	unknow
ECCN code	-	-	EAR99	EAR99	EAR99	EAR99
Maximum access time	-	-	120 ns	100 ns	100 ns	120 ns
I/O type	-	-	COMMON	COMMON	COMMON	COMMON
JESD-30 code	-	-	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
JESD-609 code	-	-	e0	e0	e0	e0
length	-	-	18.4 mm	11.8 mm	18.4 mm	11.8 mm
memory density	-	-	524288 bi	524288 bi	524288 bi	524288 bi
Memory IC Type	-	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	-	-	8	8	8	8
Number of functions	-	-	1	1	1	1
Number of terminals	-	-	32	32	32	32
word count	-	-	65536 words	65536 words	65536 words	65536 words
character code	-	-	64000	64000	64000	64000
Operating mode	-	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	-	-	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-	-	-25 °C	-25 °C	-25 °C	-25 °C
organize	-	-	64KX8	64KX8	64KX8	64KX8
Output characteristics	-	-	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	-	TSOP1	TSOP1	TSOP1	TSOP1
Encapsulate equivalent code	-	-	TSSOP32,.8,20	TSSOP32,.56,20	TSSOP32,.8,20	TSSOP32,.56,20
Package shape	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	-	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	-	-	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	-	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum standby current	-	-	0.000014 A	0.000014 A	0.000014 A	0.000014 A
Minimum standby current	-	-	2 V	2 V	2 V	2 V
Maximum slew rate	-	-	0.035 mA	0.04 mA	0.04 mA	0.035 mA
Maximum supply voltage (Vsup)	-	-	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	-	-	2.7 V	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	-	-	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	-	-	YES	YES	YES	YES
technology	-	-	CMOS	CMOS	CMOS	CMOS
Temperature level	-	-	OTHER	OTHER	OTHER	OTHER
Terminal surface	-	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	-	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	-	-	0.5 mm	0.5 mm	0.5 mm	0.5 mm
Terminal location	-	-	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	-	-	8 mm	8 mm	8 mm	8 mm

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