CXK5T8512TM-10LLX datasheet, PDF

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CXK5T8512TM-10LLX: Description65536-word X 8-bit High Speed CMOS Static RAM; Categorystorage storage; File Size136KB，10 Pages; ManufacturerSONY; Websitehttp://www.sony.co.jp

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CXK5T8512TM-10LLX Overview

65536-word X 8-bit High Speed CMOS Static RAM

CXK5T8512TM-10LLX Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SONY
Parts packaging code	TSOP
package instruction	TSOP1, TSSOP32,.8,20
Contacts	32
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	100 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	18.4 mm
memory density	524288 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	64KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.000014 A
Minimum standby current	2 V
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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CXK5T8512TM/TN

-10LLX/12LLX

65536-word

8-bit High Speed CMOS Static RAM

Description

The CXK5T8512TM/TN is a high speed CMOS

static RAM organized as 65536-words by 8-bits.

Special feature are low power consumption and

high speed.

The CXK5T8512TM/TN is a suitable RAM for

portable equipment with battery back up.

Features

•

Extended operating temperature range:

–25 to +85°C

•

Wide supply voltage range operation: 2.7 to 3.6V

•

Fast access time:

(Access time)

3.0V operation

CXK5T8512TM/TN-10LLX 100ns (Max.)

CXK5T8512TM/TN-12LLX 120ns (Max.)

3.3V operation

CXK5T8512TM/TN-10LLX 85ns (Max.)

CXK5T8512TM/TN-12LLX 100ns (Max.)

Low standby current:

14µA (Max.)

Low data retention current: 12µA (Max.)

Low power data retention: 2.0V (Min.)

Package line-up

CXK5T8512TM

8mm

20mm 32 pin TSOP package

CXK5T8512TN

8mm

13.4mm 32 pin TSOP package

Preliminary

CXK5T8512TN

32 pin TSOP (Plastic)

CXK5T8512TM

32 pin TSOP (Plastic)

Block Diagram

A15

A13

A11

A14

A12

Buffer

Row

Decoder

Memory

Matrix

1024

512

GND

•

A10

Buffer

I/O Gate

Column

Decoder

Buffer

CE1

CE2

I/O Buffer

I/O1

I/O8

Function

65536-word

8-bit static RAM

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

–1–

PE96727-PS

CXK5T8512TM-10LLX Related Products

	CXK5T8512TM-10LLX	CXK5T8512TM	CXK5T8512TM-12LLX	CXK5T8512TN-10LLX	CXK5T8512TN	CXK5T8512TN-12LLX
Description	65536-word X 8-bit High Speed CMOS Static RAM	65536-word X 8-bit High Speed CMOS Static RAM	65536-word X 8-bit High Speed CMOS Static RAM	65536-word X 8-bit High Speed CMOS Static RAM	65536-word X 8-bit High Speed CMOS Static RAM	65536-word X 8-bit High Speed CMOS Static RAM
Is it Rohs certified?	incompatible	-	incompatible	incompatible	-	incompatible
Maker	SONY	-	SONY	SONY	-	SONY
Parts packaging code	TSOP	-	TSOP	TSOP	-	TSOP
package instruction	TSOP1, TSSOP32,.8,20	-	TSOP1, TSSOP32,.8,20	TSOP1, TSSOP32,.56,20	-	TSOP1, TSSOP32,.56,20
Contacts	32	-	32	32	-	32
Reach Compliance Code	unknow	-	unknow	unknow	-	unknow
ECCN code	EAR99	-	EAR99	EAR99	-	EAR99
Maximum access time	100 ns	-	120 ns	100 ns	-	120 ns
I/O type	COMMON	-	COMMON	COMMON	-	COMMON
JESD-30 code	R-PDSO-G32	-	R-PDSO-G32	R-PDSO-G32	-	R-PDSO-G32
JESD-609 code	e0	-	e0	e0	-	e0
length	18.4 mm	-	18.4 mm	11.8 mm	-	11.8 mm
memory density	524288 bi	-	524288 bi	524288 bi	-	524288 bi
Memory IC Type	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM	-	STANDARD SRAM
memory width	8	-	8	8	-	8
Number of functions	1	-	1	1	-	1
Number of terminals	32	-	32	32	-	32
word count	65536 words	-	65536 words	65536 words	-	65536 words
character code	64000	-	64000	64000	-	64000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS
Maximum operating temperature	85 °C	-	85 °C	85 °C	-	85 °C
Minimum operating temperature	-25 °C	-	-25 °C	-25 °C	-	-25 °C
organize	64KX8	-	64KX8	64KX8	-	64KX8
Output characteristics	3-STATE	-	3-STATE	3-STATE	-	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
encapsulated code	TSOP1	-	TSOP1	TSOP1	-	TSOP1
Encapsulate equivalent code	TSSOP32,.8,20	-	TSSOP32,.8,20	TSSOP32,.56,20	-	TSSOP32,.56,20
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	-	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
power supply	3.3 V	-	3.3 V	3.3 V	-	3.3 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified
Maximum seat height	1.2 mm	-	1.2 mm	1.2 mm	-	1.2 mm
Maximum standby current	0.000014 A	-	0.000014 A	0.000014 A	-	0.000014 A
Minimum standby current	2 V	-	2 V	2 V	-	2 V
Maximum slew rate	0.04 mA	-	0.035 mA	0.04 mA	-	0.035 mA
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V	3.6 V	-	3.6 V
Minimum supply voltage (Vsup)	2.7 V	-	2.7 V	2.7 V	-	2.7 V
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V	3.3 V	-	3.3 V
surface mount	YES	-	YES	YES	-	YES
technology	CMOS	-	CMOS	CMOS	-	CMOS
Temperature level	OTHER	-	OTHER	OTHER	-	OTHER
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	-	GULL WING	GULL WING	-	GULL WING
Terminal pitch	0.5 mm	-	0.5 mm	0.5 mm	-	0.5 mm
Terminal location	DUAL	-	DUAL	DUAL	-	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
width	8 mm	-	8 mm	8 mm	-	8 mm

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