DISCRETE SEMICONDUCTORS
DATA SHEET
BTA208X series D, E and F
Three quadrant triacs guaranteed
commutation
Objective specification
October 1999
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation
triacs in a full pack, plastic envelope
intended for use in motor control circuits
or with other highly inductive loads.
These
devices
balance
the
requirements
of
commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
BTA208X series D, E and F
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BTA208X-
BTA208X-
BTA208X-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600D
600E
600F
600
8
65
MAX.
-
800E
800F
800
8
65
UNIT
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2
gate
1 2 3
T1
case isolated
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
hs
≤
73 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-600
600
1
8
MAX.
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
65
72
21
100
2
5
5
0.5
150
125
A
A
A
2
s
A/µs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
October 1999
2
Rev 1.200
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
CONDITIONS
BTA208X series D, E and F
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H.
≤
65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz
heatsink
C
isol
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.5
6.5
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
2
CONDITIONS
BTA208X-
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 10 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 ˚C
V
D
= V
DRM(max)
;
T
j
= 125 ˚C
-
-
-
-
-
-
-
-
-
0.25
-
-
-
-
-
-
-
-
1.3
0.7
0.4
0.1
MIN.
TYP.
...D
5
5
5
15
25
25
15
MAX.
...E
10
10
10
20
30
30
25
1.65
1.5
-
0.5
...F
25
25
25
25
40
40
30
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
UNIT
I
L
Latching current
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
2
Device does not trigger in the T2-, G+ quadrant.
October 1999
3
Rev 1.200
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
CONDITIONS
BTA208X-
V
DM
= 67% V
DRM(max)
;
T
j
= 110 ˚C; exponential
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 110 ˚C;
I
T(RMS)
= 8 A;
dV
com
/dt = 20v/µs; gate
open circuit
V
DM
= 400 V; T
j
= 110 ˚C;
I
T(RMS)
= 8 A;
dV
com
/dt = 0.1v/µs; gate
open circuit
I
TM
= 12 A; V
D
= V
DRM(max)
;
I
G
= 0.1 A; dI
G
/dt = 5 A/µs
...D
30
BTA208X series D, E and F
MIN.
...E
60
...F
70
TYP.
MAX.
-
UNIT
V/µs
dI
com
/dt
1.8
3.5
4.5
-
A/ms
dI
com
/dt
Critical rate of change of
commutating current
3.5
4.5
5.5
-
A/ms
t
gt
Gate controlled turn-on
time
-
-
-
2
-
µs
October 1999
4
Rev 1.200
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
3.2
3.0
BTA208X series D, E and F
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
3
1.0 (2x)
0.6
2.54
0.5
2.5
1.3
0.9
0.7
5.08
Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1999
5
Rev 1.200
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