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MT41JTF6464AY-1G1B1

Description
DDR DRAM Module, 64MX64, CMOS, LEAD FREE, UDIMM-240
Categorystorage    storage   
File Size310KB,12 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT41JTF6464AY-1G1B1 Overview

DDR DRAM Module, 64MX64, CMOS, LEAD FREE, UDIMM-240

MT41JTF6464AY-1G1B1 Parametric

Parameter NameAttribute value
MakerMicron Technology
package instructionDIMM,
Reach Compliance Codecompliant
access modeSINGLE BANK PAGE BURST
Other featuresAUTO/SELF REFRESH; WD-MAX
JESD-30 codeR-XDMA-N240
length133.35 mm
memory density4294967296 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals240
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX64
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Maximum seat height30.5 mm
self refreshYES
Maximum supply voltage (Vsup)1.575 V
Minimum supply voltage (Vsup)1.425 V
Nominal supply voltage (Vsup)1.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1 mm
Terminal locationDUAL
width2.7 mm
Base Number Matches1
512MB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
Features
DDR3 SDRAM UDIMM
MT4JTF6464AY – 512MB
Features
• DDR3 functionality and operations supported as
defined in the component data sheet
• 240-pin, unbuffered dual in-line memory module
(UDIMM)
• Fast data transfer rates: PC3-12800, PC3-10600,
PC3-8500, or PC3-6400
• 512MB (64 Meg x 64)
• V
DD
= V
DDQ
= 1.5V ±0.075V
• V
DDSPD
= +3.0V to +3.6V
• Reset pin for improved system stability
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Single rank
• 8 internal device banks
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Adjustable data-output drive strength
• Serial presence-detect (SPD) EEPROM
• Gold edge contacts
• Lead-free
• Fly-by topology
• Terminated command, address, and control bus
Table 1: Key Timing Parameters
Speed
Grade
-1G6
-1G4
-1G1
-1G0
-80B
Industry
Nomenclature
PC3-12800
PC3-10600
PC3-8500
PC3-8500
PC3-6400
Data Rate (MT/s)
CL = 11 CL = 10
1600
1333
1333
CL = 9
1333
1333
CL = 8
1066
1066
1066
1066
CL = 7
1066
1066
1066
CL = 6
800
800
800
800
800
CL = 5
667
667
667
667
667
t
RCD
t
RP
t
RC
Figure 1: 240-Pin UDIMM (MO-269 R/C C)
Module height: 30mm (1.18in)
• Operating temperature
1
– Commercial (0°C
T
A
+70°C)
– Industrial (–40°C
T
A
+85°C)
• Package
– 240-pin DIMM
• Frequency/CAS latency
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
– 1.87ns @ CL = 8 (DDR3-1066)
– 2.5ns @ CL = 5 (DDR3-800)
– 2.5ns @ CL = 6 (DDR3-800)
Note:
Options
Marking
None
I
Y
-1G6
-1G4
-1G1
-1G0
-80C
-80B
1. Contact Micron for industrial temperature
module offerings.
(ns)
13.125
13.125
13.125
15
15
(ns)
13.125
13.125
13.125
15
15
(ns)
48.125
49.125
50.625
52.5
52.5
PDF: 09005aef82b2263f
jtf4c_64x64ay.pdf - Rev. E 04/13 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2007 Micron Technology, Inc. All rights reserved.

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