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SM8S16HE3_A/I

Description
Trans Voltage Suppressor Diode, 5200W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, ROHS COMPLIANT, PLASTIC PACKAGE-1
CategoryDiscrete semiconductor    diode   
File Size101KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SM8S16HE3_A/I Overview

Trans Voltage Suppressor Diode, 5200W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, ROHS COMPLIANT, PLASTIC PACKAGE-1

SM8S16HE3_A/I Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instructionR-PSSO-C1
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, PD-CASE
Maximum breakdown voltage21.8 V
Minimum breakdown voltage17.8 V
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-218AB
JESD-30 codeR-PSSO-C1
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation5200 W
Number of components1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
polarityUNIDIRECTIONAL
Maximum power dissipation8 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage16 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
SM8S10 thru SM8S43A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
6600 W
5200 W
8W
10 V to 43 V
700 A
175 °C
Uni-directional
DO-218AB
DO-218AB
PRIMARY CHARACTERISTICS
V
BR
P
PPM
(10 x 1000 μs)
P
PPM
(10 x 10 000 μs)
P
D
V
WM
I
FSM
T
J
max.
Polarity
Package
11.1 V to 52.8 V
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case:
DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ..., revision code only
applicable for part number with ± 5 % tolerance)
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
heatsink is anode
per
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with 10/1000 μs waveform
with 10/10 000 μs waveform
SYMBOL
P
PPM
P
D
I
PPM
(1)
VALUE
6600
5200
8.0
See next table
700
-55 to +175
UNIT
W
W
A
A
°C
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note
(1)
Non-repetitive current pulse derated above T = 25 °C
A
I
FSM
T
J
, T
STG
Revision: 31-Aug-16
Document Number: 88387
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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