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KTC3198-BLA1G

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size212KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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KTC3198-BLA1G Overview

Small Signal Bipolar Transistor

KTC3198-BLA1G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instruction,
Reach Compliance Codecompliant
Base Number Matches1
KTC3198-O/Y/GR/BL
Taiwan Semiconductor
Small Signal Product
TO-92 NPN Bipolar Transistor
FEATURES
- The transistor is subdivided into four groups according to
its DC current gain: O, Y, GR, BL
- Pb free and RoHS compliant
MECHANICAL DATA
- Case: TO-92 small outline plastic package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 195mg (approximately)
1. Emitter
2. Collector
3. Base
APPLICATION
- General purpose switching and AF amplifier application
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Collector Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance From Junction to Ambient
Junction and Storage Temperature Range
SYMBOL
P
C
V
CBO
V
CEO
V
EBO
I
C
R
θJA
T
J
, T
STG
VALUE
0.5
60
50
5
0.15
250
-55 to + 150
UNIT
W
V
V
V
A
℃/W
°C
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
V
CE
= 6V, I
C
= 150mA
I
C
= 100mA, I
B
=10mA
I
C
= 100mA, I
B
=10mA
V
CE
= 10V, I
C
=1mA
V
CB
= 10V, I
E
=0, f=1MHz
SYMBOL
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
MIN
-
-
70
25
MAX
0.1
0.1
700
0.25
1
UNIT
μA
μA
V
V
MHz
pF
80
3.5
CLASSIFIACTION OF h
FE
RANK
RANGE
O
70-140
Y
120-240
GR
200-400
BL
300-700
Document Number: DS_S1405004
Version: A14

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