SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - APRIL 1997
PARTMARKING DETAILS
BC856A3A
BC856BZ3B
BC857AZ3E
BC857B3F
BC857C3G
BC858A3J
BC858B3K
BC858C3L
BC859AZ4A
BC859B4B
BC859CZ4C
BC860AZ4E
BC860B4F
BC860C4GZ
COMPLEMENTARY TYPES
BC856
BC857
BC858
BC859
BC860
BC846
BC847
BC848
BC849
BC850
BC856
BC858
BC860
BC857
BC859
C
B
SOT23
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BC856
BC857
BC858
BC859
BC860
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage
Temperature Range
PARAMETER
SYMBOL
Max
Collector Cut-Off Current I
CBO
Max
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
EM
I
BM
I
EM
P
tot
T
j
:T
stg
-80
-80
-65
-50
-50
-45
-30
-30
-30
-30
-30
-30
-5
-100
-200
-200
-200
330
-55 to +150
-50
-50
-45
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
BC856 BC857 BC858 BC859 BC860
-15
-4
-75 -75
-300 -300
-75
-300
-250
-650
-300
-600
-700
-850
-600 -600
-650 -650
-750 -750
-600
-650
-750
-820
-580 -580
-650 -650
-750 -750
-75 -75
-250 -250
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
Typ
Max.
Typ
Max.
Typ
Max.
V
BE(sat)
Typ
Typ
UNIT CONDITIONS.
nA
V
CB
= -30V
V
CB
= -30V
µ
A
Tamb=150°C
mV I
C
=-10mA,
I
B
=-0.5mA
mV I
C
=-100mA,
I
B
=-5mA
mV I
C
=-10mA*
mV
mV
mV
mV
I
C
=-10mA,
I
B
=-0.5mA
I
C
=-100mA,
I
B
=-5mA
I
C
=-2mA
V
CE
=-5V
I
C
=-10mA
V
CE
=-5V
Base-Emitter Voltage
V
BE
Min
Typ
Max
Max
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.
BC856
BC858
BC860
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
Static
Group VI
Forward
Current Ratio
Group A
SYMBOL
h
FE
Min
Typ
Max
Typ
h
FE
Min
Typ
Max
Typ
Typ
h
FE
Min
Typ
Max
Typ
h
FE
Typ.
Min
Typ
Max
Typ
Typ
Typ
BC856 BC857 BC858 BC859 BC860
BC857
BC859
75
110
150
90
75
110
150
90
120
120
Group B
Group C
200
150
200
270
420
500
800
150
75
110
150
90
125
180
250
120
150
220
290
475
200
270
420
500
800
400
150
4.5
UNIT CONDITIONS.
I
C
=-2mA,
V
CE
=-5V
I
C
=-0.01mA,V
CE
=-5V
I
C
=-2mA,
V
CE
=-5V
I
C
=-100mA,V
CE
=-5V
I
C
=-0.01mA,V
CE
=-5V
I
C
=-2mA,
V
CE
=-5V
I
C
=-100mA,V
CE
=-5V
I
C
=-0.01mA,
V
CE
=-5V
I
C
=-2mA,
V
CE
=-5V
270
420
500
800
300
270
Transition Frequency
Collector-Base
Capacitance
f
T
C
obo
420
500
800
I
C
=-100mA,V
CE
=-5V
300 MHz I
C
=-10mA,V
CE
=-5V
f=100MHz
V
CB
=-10V,
pF
f=1MHz
Spice parameter data is available upon request for these devices
Talking
京公网安备 11010802033920号
EEWORLD
