SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
・With
Built-in Bias Resistors.
・Reduce
a Quantity of Parts and Manufacturing Process.
・High
Packing Density.
・Suffix
U
: Qualified to AEC-Q101.
ex) KRC830E-RTK/HU
A1
KRC830E~KRC834E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
・Simplify
Circuit Design.
A
C
1
6
5
2
3
E
P
P
4
DIM
A
A1
B
B1
C
D
E
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_
1.6 + 0.05
_
1.2 + 0.05
0.50
_
0.2 + 0.05
_
0.35 + 0.05
_
0.5 + 0.05
_
0.12 + 0.05
5
C
EQUIVALENT CIRCUIT
C
B
R1
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
H
Q1
Q2
1.
2.
3.
4.
5.
6.
Q
1
Q
2
Q
2
Q
2
Q
1
Q
1
EMITTER
EMITTER
BASE
COLLECTOR
BASE
COLLECTOR
E
1
2
3
TES6
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
50
50
5
100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
SYMBOL
P
C
*
T
j
T
stg
RATING
200
150
-55½150
UNIT
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC830E
KRC831E
Input Resistor
KRC832E
KRC833E
KRC834E
R
1
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
*
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
MIN.
-
-
120
-
-
3.29
7
70
15.4
32.9
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
MAX.
100
100
-
0.3
-
6.11
13
130
28.6
61.1
kΩ
V
MHz
UNIT
nA
nA
Note : * Characteristic of Transistor Only.
2019. 01. 08
Revision No : 6
J
D
1/4
KRC830E~KRC834E
h
FE
- I
C
2k
KRC830E
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2
1
0.5
0.3
KRC830E
I
C
/I
B
=20
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
2k
KRC831E
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
KRC831E
I
C
/I
B
=20
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
2k
KRC832E
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2
1
0.5
0.3
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
KRC832E
I
C
/I
B
=20
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
0.05
0.03
0.01
10
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
2019. 01. 08
Revision No : 6
3/4
Embedded System
京公网安备 11010802033920号
EEWORLD
