Freescale Semiconductor
Data Sheet: Technical Data
Document Number: MC13821
Rev. 1.5, 09/2009
MC13821
MC13821
Low Noise Amplifier with Bypass
Switch
Device
MC13821
Package Information
Plastic Package
Case 1345
(QFN–12)
Ordering Information
Device Marking or
Operating
Temperature Range
821
Package
QFN-12
1
Introduction
Contents:
1
2
3
4
5
6
7
8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Electrical Specifications . . . . . . . . . . . . . . . . 3
Application Information . . . . . . . . . . . . . . . . 10
Printed Circuit Board . . . . . . . . . . . . . . . . . . 28
Scattering Parameters . . . . . . . . . . . . . . . . . 32
Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Reference Documentation . . . . . . . . . . . . . . 42
Revision History . . . . . . . . . . . . . . . . . . . . . . 42
The MC13821 is a high gain LNA with extremely low
noise figure, designed for cellular, GPS and ISM band
applications. An integrated bypass switch is included to
preserve input intercept performance. The input and
output match are external to allow maximum design
flexibility. The MC13821 is fabricated using Freescale's
advanced RF BiCMOS process using the SiGe:C option
and is packaged in the QFN-12 leadless package.
1.1
•
•
•
Features
RF Input Frequency: 1000 MHz to 2.4 GHz
Gain: 16.4 dB (typ) at 1960 MHz and 15.7 dB
(typ) at 2140 MHz
Output 3rd Order Intercept Point (OIP3): 17.4
dBm (typ) at 1960 MHz and 19.7 dBm (typ) at
2140 MHz
Noise Figure (NF): 1.25 dB (typ) at 1960 MHz
and 1.3 dB (typ) at 2140 MHz
1dB Compression Point (P1dB): -6 dBm (typ) at
1960 MHz and -5 dBm (typ) at 2140 MHz
•
•
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2005–2009. All rights reserved.
Introduction
•
•
•
•
•
•
Freescale’s IP3 Boost Circuitry
Bypass Mode Included for Improved Intercept Point Performance
Total Supply Current:
2.8 mA @ 2.7 Vdc
10 µA (typ) in Bypass Mode
Bias Stabilized for Device and Temperature Variations
QFN-12 Leadless Package with Low Parasitics
SiGe Technology Ensures Lowest Possible Noise Figure
NC
12
NC
11
NC
10
NC
1
MC13821
9
Gnd
VCC1
2
Logic
8
Gain
LNA
Out
3
7
Enable
4
Rbias
5
Emit
Gnd
6
LNA
In
Figure 1. Simplified Block Diagram
MC13821 Data Sheet: Technical Data, Rev. 1.5
2
Freescale Semiconductor
Electrical Specifications
2
Electrical Specifications
Table 1. Maximum Ratings
Ratings
Symbol
V
CC
T
stg
T
A
P
rf
P
dis
R
θJC
R
θJA
Minimum
2.7
-65
-30
—
—
24
90
Typical
2.75
25
25
-30
—
24
90
Maximum
3.3
150
85
10
100
24
90
Unit
V
°C
°C
dBm
mW
C/W
C/W
Supply Voltage
Storage Temperature Range
Operating Ambient Temperature Range
RF Input Power
Power Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient, 4 Layer Board
NOTES:
1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating
Conditions and Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM)
≤200
V, Charge Device Model (CDM)
≤450
V, and
Machine Model (MM)
≤50
V. Additional ESD data available upon request.
Table 2. Recommended Operating Conditions
Characteristic
RF Frequency range
Supply Voltage
Logic Voltage
Input High Voltage
Input Low Voltage
Symbol
f
RF
V
CC
—
—
Minimum
1000
2.7
1.25
0
Typical
—
2.75
1.8
0
Maximum
2400
3
V
CC
0.8
Unit
MHz
V
V
Table 3. Electrical Characteristics
(V
CC
= 2.75 V, T
A
= 25°C, unless otherwise noted.)
Characteristic
Insertion Gain
R1=1.2 kΩ, Freq=1.960 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=2 kΩ, Freq=1.960 GHz
R1=2 kΩ, Freq=2.14 GHz
Maximum Stable Gain and/or Maximum Available Gain
1
R1=1.2 kΩ, Freq=1.960 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=2 kΩ, Freq=1.960 GHz
R1=2 kΩ, Freq=2.14 GHz
Minimum Noise Figure
R1=1.2 kΩ, Freq=1.960 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=2 kΩ, Freq=1.960 GHz
R1=2 kΩ, Freq=2.14 GHz
Symbol
|S21|
2
15.0
14.5
13.3
13
MSG, MAG
20.0
19.5
19.5
19.5
NFmin
0.9
0.9
0.9
0.9
1.01
0.96
1.01
0.96
1.1
1.05
1.1
1.05
21.0
20.5
20.5
19.8
22.0
21.5
21.5
21.0
dB
16.0
15.6
14.3
14.2
17.0
16.5
15.3
15.2
dB
Minimum
Typical
Maximum
Unit
dB
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
3
Electrical Specifications
Table 3. Electrical Characteristics (continued)
(V
CC
= 2.75 V, T
A
= 25°C, unless otherwise noted.)
Characteristic
Associated Gain at Minimum Noise Figure
R1=1.2 kΩ, Freq=1.960 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=2 kΩ, Freq=1.960 GHz
R1=2 kΩ, Freq=2.14 GHz
1
Symbol
Gnf
Minimum
Typical
Maximum
Unit
dB
19.8
19
19.6
19
20.8
19.8
20.5
19.8
21.8
20.8
21.5
20.8
Maximum Available Gain and Maximum Stable Gain
are defined by the K factor as follows:
S
2
21
MAG = ----------
⎛
K
±
K
–
1
⎞
⎠
S
⎝
12
, if K > 1,
S
21
MSG = ----------
S
12
, if K < 1
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(V
CC
= 2.75 V, T
A
= 25°C, Rbias = 2 kΩ, unless otherwise noted.)
Characteristic
1575 MHz (Refer to
Figure 9)
Frequency
Active Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75 V
Bypass Gain
Bypass Noise Figure
Bypass Input Third Order Intercept Point
Bypass Current
1960 MHz (Refer to
Figure 10)
Frequency
Active Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75 V
Bypass Gain
Bypass Noise Figure
Bypass Input Third Order Intercept Point
Bypass Current
f
G
NF
IIP3
P
1dB
I
CC
G
NF
IIP3
—
15
1.0
-0.5
-7
2.3
-6
3.9
23
2
1960
16.4
1.25
1
-6
2.8
-3.9
4.7
25
4
—
17.4
1.45
2
-5
3.3
-3
6
26
20
MHz
dB
dB
dBm
dBm
mA
dB
dB
dBm
µA
f
G
NF
IIP3
P
1dB
I
CC
G
NF
IIP3
—
16
1.0
-1.0
-11
2.3
-6.0
3.9
24
2
1575
17.7
1.25
0.5
-10
2.8
-4.1
4.8
26
4
—
18.7
1.45
1.5
-9
3.3
-3.1
6
27
20
MHz
dB
dB
dBm
dBm
mA
dB
dB
dBm
µA
Symbol
Minimum
Typical
Maximum
Unit
MC13821 Data Sheet: Technical Data, Rev. 1.5
4
Freescale Semiconductor
Electrical Specifications
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(V
CC
= 2.75 V, T
A
= 25°C, Rbias = 2 kΩ, unless otherwise noted.)
Characteristic
Symbol
Minimum
Typical
Maximum
Unit
1960 MHz (R1 = 1.3 kΩ, R2 = 68
Ω,
C1 = 15 pF, C2 = 1.2 pF, L1 = 5.6 nH) (Refer to
Figure 10)
Frequency
Active Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75 V
Bypass Gain
Bypass Noise Figure
Bypass Input Third Order Intercept Point
Bypass Current
f
G
NF
IIP3
P
1dB
I
CC
G
NF
IIP3
—
10.5
1.1
-2
-15
3.6
-6.5
3.8
20
2
1960
11.5
1.3
0
-10
4.5
-3.5
4.7
21
4
—
13
1.9
1
—
5.5
-3
6
22
20
MHz
dB
dB
dBm
dBm
mA
dB
dB
dBm
µA
1960 MHz (R1 = 1.8 kΩ, R2 = 330
Ω,
C1 = 8 pF, C2 = 1.2 pF, L1 = 4.7 nH) (Refer to
Figure 10)
Frequency
Active Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75 V
Bypass Gain
Bypass Noise Figure
Bypass Input Third Order Intercept Point
Bypass Current
2140 MHz (Refer to
Figure 11)
Frequency
Active Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75 V
Bypass Gain
Bypass Noise Figure
Bypass Input Third Order Intercept Point
Bypass Current
f
G
NF
IIP3
P
1dB
I
CC
G
NF
IIP3
—
14.7
1.1
2.5
-6.0
2.3
-4.2
3.0
22.5
2
2140
15.7
1.3
3.5
-5
2.8
-3.2
4.2
24.5
4
—
17.5
1.5
4.5
-4
3.8
-2.2
6
25.5
20
MHz
dB
dB
dBm
dBm
mA
dB
dB
dBm
µA
f
G
NF
IIP3
P
1dB
I
CC
G
NF
IIP3
—
13.8
1.1
-2
-10
2.3
-6.5
3.8
16
2
1960
14.8
1.3
0
-5
2.8
-3.5
4.7
18
4
—
16
1.9
1
-4
5.5
-3
6
18.5
20
MHz
dB
dB
dBm
dBm
mA
dB
dB
dBm
µA
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
5
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