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QP50-6-SD2

Description
Photodiode 50mm2 quadrant detector module
CategoryLED optoelectronic/LED   
File Size269KB,2 Pages
ManufacturerPacific Silicon Sensor (First Sensor)
Websitehttps://www.first-sensor.com/en/
Environmental Compliance
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QP50-6-SD2 Overview

Photodiode 50mm2 quadrant detector module

Pacific Silicon Sensor Series 6 Data Sheet
Quad Sum and Difference Amplifier
Part Description QP50-6SD2
Order # 10-025
1.50
1.25
0.235
NO CONNECTION
Q2
Q1
0.75
PD BIAS
V(B-T)
V(L-R)
V(SUM)
V+
GND
V-
ACTIVE AREA: 4 X 11.78 mm
2
(7.80 mm DIA w/ 42 µm GAPS)
0.125
PD C
L
0.100
0.062
0.13
CHIP SURFACE
0.50
2X Ø0.100
TOOLING HOLE
PD C
L
PINS ON 0.100
CENTERS
7
0.57
0.23
1.00
Q2 Q1
Q3 Q4
Q4
1
Q3
0.125
COMMON
CATHODE
TOP VIEW
ALL DIMENSIONS IN INCHES
0.70
0.25
R
o
H
DESCRIPTION
The
QP50-6SD2
is a quad photodiode array with current-to-voltage amplifiers that provide
bottom minus top and left minus right difference signals. Additionally the
QP50-6SD2
provides a signal that is the sum of all four quadrant diode signals. The difference signals
are voltage analogs of the light intensity difference sensed by the pairs of photodiode
elements in the array. The board has a 7 pin connector attached for easy hook up.
APPLICATIONS
NIR & visible pulsed light
positioning and tracking
Laser beam centering
S
C
PLI
A
NT
OM
OPTIONS
Can be purchased without connector, use order # 10-031.
For alternate gap size, see data sheet QP50-6-18u-SD2 for 18 µm gap version.
2
2
Also available with quad detector active area sizes ranging from 1mm to 20 mm .
ABSOLUTE MAXIMUM RATING
SYMBOL PARAMETER
MIN
T
STG
T
OP
V
S
V
R
Storage Temp
Operating Temp
Power Supply Voltage
Recommended ±15V
Applied Bias Voltage*
-15
0
±4.5
0
SPECTRAL RESPONSE @ 22°C
MAX
+100
+70
±18
15
UNITS
°C
°C
V
RESPONSIVITY (A/W)
0.70
0.60
0.50
0.40
0.30
0.20
0.10
V
CONNECTIONS
PD BIAS
V(B-T)
V(L-R)
V(SUM)
V+
GND
V-
1
7
0.00
400
500
600
700
800
900
1000
1100
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS @ 22° C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
V
O
I
O
Output Voltage (all outputs)
Output Current Limit
Slew Rate
Theoretical noise
∆ƒ
-3dB
Bandwidth**
V
s
= ± 15 V; V
R
= 0 V
V
s
= ± 15 V; V
R
= 0 V
V
s
= ± 15 V; V
R
= 0 V
V
s
= ± 15 V; V
R
= 5 V;
λ
= 880 nm
MIN
---
---
---
---
---
---
TYP
+V
s
-3
-V
s
+3
---
---
15
250
MAX
---
---
25
10
---
---
UNITS
V
mA
V/µs
nV/√Hz
kHz
* actual bias voltage to photodiode: pad 1 voltage times 0.91. Do not apply negative voltages to pad 1.
** dependant on bias voltage
Disclaimer: Due to our policy of continued development, specifications are subject to change without notice.
9/24/2010
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